Effect of ion flux on recrystallization and resistance lowering in phosphorus-implanted (0001)-oriented 4H-SiC

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	Effect of ion flux on recrystallization and resistance lowering in phosphorus-implanted (0001)-oriented 4H-SiC
	Xin G ; Sun, GS ; Li JM ; Zhang YX ; Lei W ; Zhao WS ; Zeng YP
刊名	chinese physics
	2005
卷号	14 期号:3 页码:599-603
关键词	ion implantation
ISSN号	1009-1963
通讯作者	xin, g, chinese acad sci, inst semicond, novel semicond mat lab, beijing 100083, peoples r china. 电子邮箱地址: gaoxin@red.semi.ac.cn
中文摘要	high-dose ion implantation of phosphorus into 4h-sic (0001) has been investigated with three different ion fluxes ranging from 1.0 to 4.0 x 10(12) p(+)cm(-2.)s(-1) and keeping the implantation dose constant at 2.0 x 10(15) p(+)cm(-2). the implantations are performed at room temperature and subsequently annealed at 1500 degrees c. photoluminescence and raman scattering are employed to investigate the implantation-induced damages and the residual defects after annealing. the electrical properties of the implanted layer are evaluated by hall effect measurements on the sample with a van der pauw configuration. based on these results, it is revealed that the damages and defects in implanted layers can be greatly reduced by decreasing the ion flux. considering room temperature implantation and a relatively low annealing temperature of 1500 degrees c, a reasonably low sheet resistance of 106 omega/square is obtained at ion flux of 1.0 x 10(12) p(+)cm(-2.)s(-1) with a donor concentration of 4.4 x 10(19)cm(-3).
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8838]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xin G,Sun, GS,Li JM,et al. Effect of ion flux on recrystallization and resistance lowering in phosphorus-implanted (0001)-oriented 4H-SiC[J]. chinese physics,2005,14(3):599-603.
APA	Xin G.,Sun, GS.,Li JM.,Zhang YX.,Lei W.,...&Zeng YP.(2005).Effect of ion flux on recrystallization and resistance lowering in phosphorus-implanted (0001)-oriented 4H-SiC.chinese physics,14(3),599-603.
MLA	Xin G,et al."Effect of ion flux on recrystallization and resistance lowering in phosphorus-implanted (0001)-oriented 4H-SiC".chinese physics 14.3(2005):599-603.