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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Valence band offset of ZnO/GaAs heterojunction measured by x-ray photoelectron spectroscopy 期刊论文 applied physics letters, 2008, 卷号: 92, 期号: 1, 页码: art. no. 012104 Zhang, PF; Liu, XL; Zhang, RQ; Fan, HB; Yang, AL; Wei, HY; Jin, P; Yang, SY; Zhu, QS; Wang, ZG 收藏  |  浏览/下载：60/2  |  提交时间：2010/03/08 Valence band offset of MgO/InN heterojunction measured by x-ray photoelectron spectroscopy 期刊论文 applied physics letters, 2008, 卷号: 92, 期号: 4, 页码: art. no. 042906 Zhang, PF; Liu, XL; Zhang, RQ; Fan, HB; Song, HP; Wei, HY; Jiao, CM; Yang, SY; Zhu, QS; Wang, ZG 收藏  |  浏览/下载：39/2  |  提交时间：2010/03/08 INN  ALN  GAN   Influence of different interlayers on growth mode and properties of InN by MOVPE 期刊论文 chinese physics letters, 2008, 卷号: 25, 期号: 1, 页码: 238-241 Zhang, RQ; Liu, XL; Kang, TT; Hu, WG; Yang, SY; Jiao, CM; Zhu, QS 收藏  |  浏览/下载：51/3  |  提交时间：2010/03/08 DEFECT STRUCTURE  EPITAXIAL GAN  BAND-GAP   Valence band offset of InN/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy 期刊论文 applied physics letters, 2008, 卷号: 93, 期号: 24, 页码: art. no. 242107 Zhang BL; Sun GS; Guo Y; Zhang PF; Zhang RQ; Fan HB; Liu XL; Yang SY; Zhu QS; Wang ZG 收藏  |  浏览/下载：231/42  |  提交时间：2010/03/08 conduction bands  III-V semiconductors  indium compounds  interface states  semiconductor heterojunctions  silicon compounds  valence bands  wide band gap semiconductors  X-ray photoelectron spectra   Determination of the valence band offset of wurtzite InN/ZnO heterojunction by x-ray photoelectron spectroscopy 期刊论文 applied physics letters, 2007, 卷号: 91, 期号: 16, 页码: art.no.162104 Zhang RQ (Zhang Riqing); Zhang PF (Zhang Panfeng); Kang TT (Kang Tingting); Fan HB (Fan Haibo); Liu XL (Liu Xianglin); Yang SY (Yang Shaoyan); Wei HY (Wei Hongyuan); Zhu QS (Zhu Qinsheng); Wang ZG (Wang, Zhanguo) 收藏  |  浏览/下载：29/0  |  提交时间：2010/03/29 INN