CORC

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Epitaxial growth of SiC on complex substrates 会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Sun GS; Li JM; Luo MC; Zhu SR; Wang L; Zhang FF; Lin LY
收藏  |  浏览/下载:15/0  |  提交时间:2010/11/15
Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC 会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Li JM; Sun GS; Zhu SR; Wang L; Luo MC; Zhang FF; Lin LY
收藏  |  浏览/下载:10/0  |  提交时间:2010/11/15
Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC 期刊论文
journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 816-819
Li JM; Sun GS; Zhu SR; Wang L; Luo MC; Zhang FF; Lin LY
收藏  |  浏览/下载:79/6  |  提交时间:2010/08/12
Epitaxial growth of SiC on complex substrates 期刊论文
journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 811-815
Sun GS; Li JM; Luo MC; Zhu SR; Wang L; Zhang FF; Lin LY
收藏  |  浏览/下载:95/9  |  提交时间:2010/08/12
The effects of carbonized buffer layer on the growth of SiC on Si 会议论文
10th international conference on molecular beam epitaxy (mbe-x), cannes, france, aug 31-sep 04, 1998
Wang YS; Li JM; Zhang FF; Lin LY
收藏  |  浏览/下载:13/0  |  提交时间:2010/11/15
The effects of carbonized buffer layer on the growth of SiC on Si 期刊论文
journal of crystal growth, 1999, 卷号: 201, 期号: 0, 页码: 564-567
Wang YS; Li JM; Zhang FF; Lin LY
收藏  |  浏览/下载:39/0  |  提交时间:2010/08/12


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