Epitaxial growth of SiC on complex substrates

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	Epitaxial growth of SiC on complex substrates
	Sun GS ; Li JM ; Luo MC ; Zhu SR ; Wang L ; Zhang FF ; Lin LY
刊名	journal of crystal growth
	2001
卷号	227 期号:0 页码:811-815
关键词	optical microscopy X-ray diffraction molecular beam epitaxy semiconducting silicon compounds SAPPHIRE DEPOSITION FILMS
ISSN号	0022-0248
通讯作者	sun gs,chinese acad sci,inst semicond,beijing 100083,peoples r china.
中文摘要	epitaxial growth of sic on complex substrates was carried out at substrate temperature from 1200 degreesc to 1400 degreesc. three kinds of new complex substrates, c-plane sapphire, aln/sapphire, and gan/aln/sapphire, were used in this study. we obtained a growth rate in the range of 1-6 mum/h. thick (6 mum) sic epitaxial layers with no cracks were successfully obtained on aln/sapphire and gan/aln/sapphire substrates. x-ray diffraction patterns have confirmed that single-crystal sic was obtained on these complex substrates. analysis of optical transmission spectra of the sic grown on sapphire substrates shows the lowest-energy gap near 2.2 ev, which is the value for cubic sic. the undoped sic showed n-type electrical conductivity. (c) 2001 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12182]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Sun GS,Li JM,Luo MC,et al. Epitaxial growth of SiC on complex substrates[J]. journal of crystal growth,2001,227(0):811-815.
APA	Sun GS.,Li JM.,Luo MC.,Zhu SR.,Wang L.,...&Lin LY.(2001).Epitaxial growth of SiC on complex substrates.journal of crystal growth,227(0),811-815.
MLA	Sun GS,et al."Epitaxial growth of SiC on complex substrates".journal of crystal growth 227.0(2001):811-815.