CORC

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CORC

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Infrared reflectance study of 3C-SiC epilayers grown on silicon substrates 期刊论文
journal of physics d-applied physics, 2012, 卷号: 45, 期号: 24, 页码: 245102
Dong, L; Sun, GS; Zheng, L; Liu, XF; Zhang, F; Yan, GG; Zhao, WS; Wang, L; Li, XG; Wang, ZG
收藏  |  浏览/下载：11/0  |  提交时间：2013/03/17
Characterization of 4H-SiC substrates and epilayers by Fourier transform infrared reflectance spectroscopy 期刊论文
chinese physics b, 2012, 卷号: 21, 期号: 4, 页码: 47802
Dong, L; Sun, GS; Zheng, L; Liu, XF; Zhang, F; Yan, GG; Zhao, WS; Wang, L; Li, XG; Wang, ZG
收藏  |  浏览/下载：11/0  |  提交时间：2013/02/07
High-Performance 4H-SiC-Based Metal-Insulator-Semiconductor Ultraviolet Photodetectors With SiO(2) and Al(2)O(3)/SiO(2) Films 期刊论文
ieee electron device letters, 2011, 卷号: 32, 期号: 12, 页码: 1722-1724
Zhang F (Zhang Feng); Sun GS (Sun Guosheng); Huang HL (Huang Huolin); Wu ZY (Wu Zhengyun); Wang L (Wang Lei); Zhao WS (Zhao Wanshun); Liu XF (Liu Xingfang); Yan GG (Yan Guoguo); Zheng L (Zheng Liu); Dong L (Dong Lin); Zeng YP (Zeng Yiping)
收藏  |  浏览/下载：16/0  |  提交时间：2012/02/22
Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 3, 页码: article no.33301
作者:  Liu XF;  Yan GG;  Zheng L;  Dong L
收藏  |  浏览/下载：38/3  |  提交时间：2011/07/05
Multi-wafer 3C-SiC heteroepitaxial growth on Si(100) substrates 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 8, 页码: art. no. 088101
Sun GS (Sun Guo-Sheng); Liu XF (Liu Xing-Fang); Wang L (Wang Lei); Zhao WS (Zhao Wan-Shun); Yang T (Yang Ting); Wu HL (Wu Hai-Lei); Yan GG (Yan Guo-Guo); Zhao YM (Zhao Yong-Mei); Ning J (Ning Jin); Zeng YP (Zeng Yi-Ping); Li JM (Li Jin-Min)
收藏  |  浏览/下载：172/19  |  提交时间：2010/09/07
In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD 会议论文
international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007
Sun, GS; Zhao, YM; Wang, L; Wang, L; Zhao, WS; Liu, XF; Ji, G; Zeng, YP
收藏  |  浏览/下载：41/0  |  提交时间：2010/03/09
Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer 会议论文
international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007
Zhao, YM; Sun, GS; Liu, XF; Li, JY; Zhao, WS; Wang, L; Li, JM; Zeng, YP
收藏  |  浏览/下载：54/0  |  提交时间：2010/03/09
Fracture properties of silicon carbide thin films charcterized by bulge test of long membranes 会议论文
3rd ieee international conference of nano/micro engineered and molecular systems, sanya, peoples r china, jan 06-09, 2008
Zhou, W; Yang, JL; Sun, GS; Liu, XF; Yang, FH; Li, JM
收藏  |  浏览/下载：49/0  |  提交时间：2010/03/09
Simulation and fabrication of the SiC-based clamped-clamped filter 会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
Zhao, YM; Ning, J; Sun, GS; Liu, XF; Wang, L; Ji, G; Wang, L; Zhao, WS; Li, JM; Yang, FH
收藏  |  浏览/下载：39/0  |  提交时间：2010/03/09
Valence band offset of InN/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy 期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 24, 页码: art. no. 242107
Zhang BL; Sun GS; Guo Y; Zhang PF; Zhang RQ; Fan HB; Liu XL; Yang SY; Zhu QS; Wang ZG
收藏  |  浏览/下载：231/42  |  提交时间：2010/03/08

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