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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Large and robust electrical spin injection into GaAs at zero magnetic field using an ultrathin CoFeB/MgO injector 期刊论文 physical review b, 2014, 卷号: 90, 期号: 8, 页码: 085310 Liang, SH; Zhang, TT; Barate, P; Frougier, J; Vidal, M; Renucci, P; Xu, B; Jaffres, H; George, JM; Devaux, X; Hehn, M; Marie, X; Mangin, S; Yang, HX; Hallal, A; Chshiev, M; Amand, T; Liu, HF; Liu, DP; Han, XF; Wang, ZG; Lu, Y 收藏  |  浏览/下载：18/0  |  提交时间：2015/03/25 Influence of different interlayers on growth mode and properties of InN by MOVPE 期刊论文 chinese physics letters, 2008, 卷号: 25, 期号: 1, 页码: 238-241 Zhang, RQ; Liu, XL; Kang, TT; Hu, WG; Yang, SY; Jiao, CM; Zhu, QS 收藏  |  浏览/下载：52/3  |  提交时间：2010/03/08 DEFECT STRUCTURE  EPITAXIAL GAN  BAND-GAP   Effect of Nitridation on Morphology, Structural Properties and Stress of AIN Films 期刊论文 chinese physics letters, 2008, 卷号: 25, 期号: 12, 页码: 4364-4367 作者:  Wei HY;  Jiao CM 收藏  |  浏览/下载：181/45  |  提交时间：2010/03/08 TRANSMISSION ELECTRON-MICROSCOPY  WURTZITE-TYPE CRYSTALS  VAPOR-PHASE EPITAXY  INTRINSIC STRESS  SAPPHIRE SURFACE  THIN-FILMS  GAN  GROWTH  DIFFRACTION  MECHANISM   Determination of the valence band offset of wurtzite InN/ZnO heterojunction by x-ray photoelectron spectroscopy 期刊论文 applied physics letters, 2007, 卷号: 91, 期号: 16, 页码: art.no.162104 Zhang RQ (Zhang Riqing); Zhang PF (Zhang Panfeng); Kang TT (Kang Tingting); Fan HB (Fan Haibo); Liu XL (Liu Xianglin); Yang SY (Yang Shaoyan); Wei HY (Wei Hongyuan); Zhu QS (Zhu Qinsheng); Wang ZG (Wang, Zhanguo) 收藏  |  浏览/下载：29/0  |  提交时间：2010/03/29 INN   Using different carrier gases to control AlN film stress and the effect on morphology, structural properties and optical properties 期刊论文 journal of physics d-applied physics, 2007, 卷号: 40, 期号: 23, 页码: 7462-7466 Hu, WG; Liu, XL; Jiao, CM; Wei, HY; Kang, TT; Zhang, PF; Zhang, RQ; Fan, HB; Zhu, QS 收藏  |  浏览/下载：56/4  |  提交时间：2010/03/08 VAPOR-PHASE EPITAXY  WURTZITE-TYPE CRYSTALS  THIN-FILMS  ALUMINUM NITRIDE  INTRINSIC STRESS  GAN  SAPPHIRE  AIN  DEPOSITION  STRAIN   Crack-free InAlGaN quaternary alloy films grown on Si(111) substrate by metalorganic chemical vapor deposition 期刊论文 journal of crystal growth, 2004, 卷号: 273, 期号: 1-2, 页码: 79-85 Wu, JJ; Li, DB; Lu, Y; Han, XX; Li, JM; Wei, HY; Kang, TT; Wang, XH; Liu, XL; Zhu, QS; Wang, ZG 收藏  |  浏览/下载：77/0  |  提交时间：2010/03/17 cracks