Effect of Nitridation on Morphology, Structural Properties and Stress of AIN Films

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	Effect of Nitridation on Morphology, Structural Properties and Stress of AIN Films
	Wei HY; Jiao CM
刊名	chinese physics letters
	2008
卷号	25 期号:12 页码:4364-4367
关键词	TRANSMISSION ELECTRON-MICROSCOPY WURTZITE-TYPE CRYSTALS VAPOR-PHASE EPITAXY INTRINSIC STRESS SAPPHIRE SURFACE THIN-FILMS GAN GROWTH DIFFRACTION MECHANISM
ISSN号	0256-307x
通讯作者	hu wg chinese acad sci inst semicond key lab semicond mat sci pob 912 beijing 100083 peoples r china. e-mail address: sivamay@semi.ac.cn
中文摘要	we investigate effects of nitridation on ain morphology, structural properties and stress. it is found that 3 min nitridation can prominently improve ain crystal structure, and slightly smooth the surface morphology. however, 10 min nitridation degrades out-of-plane crystal structure and surface morphology instead. additionally, 3-min nitridation introduces more tensile stress (1.5 gpa) in ain films, which can be attributed to the weaker islands 2d coalescent. nitridation for 10 min can introduce more defects, or even forms polycrystallinity interlayer, which relaxes the stress. thus, the stress in ain with 10 min nitridation decreases to -0.2 gpa compressive stress.
学科主题	半导体材料
收录类别	SCI
资助信息	national natural science foundation of china 60376013 supported by the national natural science foundation of china under grant no 60376013.
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7477]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wei HY,Jiao CM. Effect of Nitridation on Morphology, Structural Properties and Stress of AIN Films[J]. chinese physics letters,2008,25(12):4364-4367.
APA	Wei HY,&Jiao CM.(2008).Effect of Nitridation on Morphology, Structural Properties and Stress of AIN Films.chinese physics letters,25(12),4364-4367.
MLA	Wei HY,et al."Effect of Nitridation on Morphology, Structural Properties and Stress of AIN Films".chinese physics letters 25.12(2008):4364-4367.