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科研机构
半导体研究所 [14]
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期刊论文 [11]
会议论文 [3]
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2016 [1]
2010 [2]
2009 [1]
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半导体材料 [14]
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Quantum Hall effect in black phosphorus two-dimensional electron system
期刊论文
nature nanotechnology, 2016, 卷号: 11, 期号: 7, 页码: 593-597
Likai Li
;
Fangyuan Yang
;
Guo Jun Ye
;
Zuocheng Zhang
;
Zengwei Zhu
;
Wenkai Lou
;
Xiaoying Zhou
;
Liang Li
;
Kenji Watanabe
;
Takashi Taniguchi
;
Kai Chang
;
YayuWang
;
Xian Hui Chen* and Yuanbo Zhang
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2017/03/10
Characterization and analysis of two-dimensional GaAs-based photonic crystal nanocavities at room temperature
期刊论文
microelectronic engineering, 2010, 卷号: 87, 期号: 10, 页码: 1834-1837
Peng YS (Peng Y. S.)
;
Xu B (Xu B.)
;
Ye XL (Ye X. L.)
;
Niu JB (Niu J. B.)
;
Jia R (Jia R.)
;
Wang ZG (Wang Z. G.)
收藏
  |  
浏览/下载:106/27
  |  
提交时间:2010/08/17
Photonic crystal nanocavities
Quantum dots
Cavity resonant mode
Room temperature
Fabrication and luminescence characterization of two-dimensional GaAs-based photonic crystal nanocavities
期刊论文
acta physica sinica, 2010, 卷号: 59, 期号: 10, 页码: 7073-7077
Peng YS (Peng Yin-Sheng)
;
Ye XL (Ye Xiao-Ling)
;
Xu B (Xu Bo)
;
Niu JB (Niu Jie-Bin)
;
Jia R (Jia Rui)
;
Wang ZG (Wang Zhan-Guo)
;
Liang S (Liang Song)
;
Yang XH (Yang Xiao-Hong)
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2010/11/14
photonic crystal nanocavity
Annealing behaviors of long-wavelength InAs/GaAs quantum dots with different growth procedures by metalorganic chemical vapor deposition
期刊论文
journal of crystal growth, 2009, 卷号: 311, 期号: 8, 页码: 2281-2284
作者:
Ye XL
;
Liang S
收藏
  |  
浏览/下载:32/4
  |  
提交时间:2010/03/08
Photoluminescence
Metalorganic vapor phase epitaxy
Self-assembled quantum dots
Indium arsenide
Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy
会议论文
2nd ieee international nanoelectronics conference, shanghai, peoples r china, mar 24-27, 2008
Liang, LY
;
Ye, XL
;
Jin, P
;
Chen, YH
;
Wang, ZG
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2010/03/09
INDUCED REFRACTIVE-INDEX
GROWTH
LASERS
GAAS
Anomalous photoluminescence of InAs quantum dots implanted by Mn ions
期刊论文
physica e-low-dimensional systems & nanostructures, 2007, 卷号: 36, 期号: 2, 页码: 221-225
作者:
Ye XL
收藏
  |  
浏览/下载:55/0
  |  
提交时间:2010/03/29
photoluminescence
Electrical and optical properties of InAs/GaAs quantum dots doped by high energy Mn implantation
期刊论文
acta physica sinica, 2007, 卷号: 56, 期号: 8, 页码: 4930-4935
Hu LJ (Hu Liang-Jun)
;
Chen YH (Chen Yong-Hai)
;
Ye XL (Ye Xiao-Ling)
;
Wang ZG (Wang Zhan-Guo)
收藏
  |  
浏览/下载:34/0
  |  
提交时间:2010/03/29
ion implantation
Evolution of the amount of InAs in wetting layers in an InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy
期刊论文
nanotechnology, 2006, 卷号: 17, 期号: 9, 页码: 2207-2211
作者:
Jin P
;
Ye XL
收藏
  |  
浏览/下载:49/0
  |  
提交时间:2010/04/11
SCANNING-TUNNELING-MICROSCOPY
ANISOTROPY SPECTROSCOPY
GROWTH
GAAS
SURFACES
ALAS
High-duty-cycle operation of GaAs/AlGaAs quantum cascade laser above liquid nitrogen temperature
期刊论文
chinese physics letters, 2006, 卷号: 23, 期号: 11, 页码: 2968-2971
Liu JQ (Liu Jun-Qi)
;
Liu FQ (Liu Feng-Qi)
;
Ye S (Ye Shao)
;
Lu L (Lu Li)
;
Yu G (Yu Guo)
;
Wang ZG (Wang Zhan-Guo)
;
Wang LC (Wang Liang-Chen)
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2010/04/11
CONTINUOUS-WAVE OPERATION
ROOM-TEMPERATURE
MU-M
Annealing effect on the surface morphology and photoluminescence of InGaAs/GaAs quantum dots grown by molecular beam epitaxy
期刊论文
journal of crystal growth, 2000, 卷号: 212, 期号: 1-2, 页码: 356-359
作者:
Xu B
;
Ye XL
收藏
  |  
浏览/下载:38/0
  |  
提交时间:2010/08/12
rapid thermal annealing
InGaAs/GaAs
quantum dots
molecular beam epitaxy
LUMINESCENCE
FABRICATION
GAAS(100)
INTERFACE
LASER
LAYER
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