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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 学科主题：半导体材料    内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Research on the band-gap of InN grown on siticon substrates 会议论文 32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005 Xiao, HL; Wang, XL; Wang, JX; Zhang, NH; Liu, HX; Zeng, YP; Li, JM 收藏  |  浏览/下载：100/15  |  提交时间：2010/03/29 MOLECULAR-BEAM EPITAXY  WURTZITE INN  NITRIDE  ABSORPTION  ALLOYS  FILMS   Homoepitaxial growth and MOS structures of 4H-SiC on off oriented n-type (0001)Si-faces 会议论文 7th international conference on solid-state and integrated circuits technology, beijing, peoples r china, oct 18-21, 2004 Sun, GS; Ning, J; Zhang, YX; Gao, X; Wang, L; Zhao, WS; Zeng, YP; Li, JM 收藏  |  浏览/下载：206/60  |  提交时间：2010/03/29 4H-SiC  LPCVD homoepitaxial growth  thermal oxidization  MOS structures  HOT-WALL CVD   Molecular beam epitaxial growth of GaN on 3c-SiC/Si(111) substrates using a thick AIN buffer layer 会议论文 13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004 Gao, X; Li, JM; Sun, GS; Zhang, NH; Wang, L; Zhao, WS; Zeng, YP 收藏  |  浏览/下载：135/48  |  提交时间：2010/03/29 SI(111)  ALN   MOCVD growth of cubic GaN: Materials and devices 会议论文 international workshop on nitride semiconductors (iwn 2000), nagoya, japan, sep 24-27, 2000 作者:  Zhao DG;  Zhang SM 收藏  |  浏览/下载：17/0  |  提交时间：2010/10/29 MOCVD  GaN  InGaN  cubic  LED  CHEMICAL-VAPOR-DEPOSITION  MOLECULAR-BEAM EPITAXY  GALLIUM NITRIDE  PHASE EPITAXY  INGAN FILMS  ELECTROLUMINESCENCE  ZINCBLENDE  WURTZITE  MBE   Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface 会议论文 10th international conference on molecular beam epitaxy (mbe-x), cannes, france, aug 31-sep 04, 1998 Zhang JP; Sun DZ; Li XB; Wang XL; Kong MY; Zeng YP; Li JM; Lin LY 收藏  |  浏览/下载：7/0  |  提交时间：2010/11/15 STRESS  GROWTH