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The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition 会议论文
1st asian conference on chemical vapour deposition, shanghai, peoples r china, may 10-13, 1999
Sun XL; Wang YY; Yang H; Li JB; Zheng LX; Xu DP; Wang ZG
收藏  |  浏览/下载:13/0  |  提交时间:2010/11/15
The effect of low temperature GaAs nucleation on the growth of GaN on Silicon (001) during MOVPE process 会议论文
symposium on nitride semiconductors, at the 1997 mrs fall meeting, boston, ma, dec 01-05, 1997
Zheng LX; Liang JW; Yang H; Li JB; Wang YT; Xu DP; Li XF; Duan LH; Hu XW
收藏  |  浏览/下载:12/0  |  提交时间:2010/10/29


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