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CORC

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Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells 期刊论文
chinese physics b, 2014, 卷号: 23, 期号: 6, 页码: 068801
Yang, J; Zhao, DG; Jiang, DS; Liu, ZS; Chen, P; Li, L; Wu, LL; Le, LC; Li, XJ; He, XG; Wang, H; Zhu, JJ; Zhang, SM; Zhang, BS; Yang, H
收藏  |  浏览/下载：15/0  |  提交时间：2015/04/02
Influences of polarization effect and p-region doping concentration on the photocurrent response of solar-blind p-i-n avalanche photodiodes 期刊论文
chinese physics b, 2014, 卷号: 23, 期号: 2, 页码: 028503
Li, XJ; Zhao, DG; Jiang, DS; Liu, ZS; Chen, P; Wu, LL; Li, L; Le, LC; Yang, J; He, XG; Wang, H; Zhu, JJ; Zhang, SM; Zhang, BS; Yang, H
收藏  |  浏览/下载：15/0  |  提交时间：2015/03/20
Distribution of electric field and design of devices in GaN avalanche photodiodes 期刊论文
science china-physics mechanics & astronomy, 2012, 卷号: 55, 期号: 4, 页码: 619-624
Wu, LL; Zhao, DG; Deng, Y; Jiang, DS; Zhu, JJ; Wang, H; Liu, ZS; Zhang, SM; Zhang, BS; Yang, H
收藏  |  浏览/下载：14/0  |  提交时间：2013/03/17
Effect of light Si-doping on the near-band-edge emissions in high quality GaN 期刊论文
journal of applied physics, 2012, 卷号: 112, 期号: 5, 页码: 053104
Le LC (Le, L. C.); Zhao DG (Zhao, D. G.); Jiang DS (Jiang, D. S.); Wu LL (Wu, L. L.); Li L (Li, L.); Chen P (Chen, P.); Liu ZS (Liu, Z. S.); Zhu JJ (Zhu, J. J.); Wang H (Wang, H.); Zhang SM (Zhang, S. M.); Yang H (Yang, H.)
收藏  |  浏览/下载：7/0  |  提交时间：2013/04/02
Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition 期刊论文
journal of alloys and compounds, 2012, 卷号: 540, 页码: 46-48
Zhao DG (Zhao, D. G.); Jiang DS (Jiang, D. S.); Le LC (Le, L. C.); Wu LL (Wu, L. L.); Li L (Li, L.); Zhu JJ (Zhu, J. J.); Wang H (Wang, H.); Liu ZS (Liu, Z. S.); Zhang SM (Zhang, S. M.); Jia QJ (Jia, Q. J.); Yang H (Yang, Hui)
收藏  |  浏览/下载：12/0  |  提交时间：2013/03/27
Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes 期刊论文
applied physics letters, 2012, 卷号: 101, 期号: 25, 页码: 252110
Le LC (Le, L. C.); Zhao DG (Zhao, D. G.); Jiang DS (Jiang, D. S.); Zhang SM (Zhang, S. M.); Yang H (Yang, H.); Li L (Li, L.); Wu LL (Wu, L. L.); Chen P (Chen, P.); Liu ZS (Liu, Z. S.); Li ZC (Li, Z. C.); Fan YM (Fan, Y. M.); Zhu JJ (Zhu, J. J.); Wang H (Wang, H.)
收藏  |  浏览/下载：17/0  |  提交时间：2013/03/20
Positive and negative effects of oxygen in thermal annealing of p-type GaN 期刊论文
semiconductor science and technology, 2012, 卷号: 27, 期号: 8, 页码: 85017
Wu, LL; Zhao, DG; Jiang, DS; Chen, P; Le, LC; Li, L; Liu, ZS; Zhang, SM; Zhu, JJ; Wang, H; Zhang, BS; Yang, H
收藏  |  浏览/下载：11/0  |  提交时间：2013/03/17
Positive and negative effects of oxygen in thermal annealing of p-type GaN 期刊论文
semiconductor science and technology, 2012, 卷号: 27, 期号: 8, 页码: 085017
Wu LL (Wu, L. L.); Zhao DG (Zhao, D. G.); Jiang DS (Jiang, D. S.); Chen P (Chen, P.); Le LC (Le, L. C.); Li L (Li, L.); Liu ZS (Liu, Z. S.); Zhang SM (Zhang, S. M.); Zhu JJ (Zhu, J. J.); Wang H (Wang, H.); Zhang BS (Zhang, B. S.); Yang H (Yang, H.)
收藏  |  浏览/下载：7/0  |  提交时间：2013/04/02
The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 12, 页码: 127306
Le LC (Le Ling-Cong); Zhao DG (Zhao De-Gang); Wu LL (Wu Liang-Liang); Deng Y (Deng Yi); Jiang DS (Jiang De-Sheng); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Wang H (Wang Hui); Zhang SM (Zhang Shu-Ming); Zhang BS (Zhang Bao-Shun); Yang H (Yang Hui)
收藏  |  浏览/下载：12/0  |  提交时间：2012/02/22
Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition 期刊论文
journal of alloys and compounds, 2011, 卷号: 509, 期号: 3, 页码: 748-750
作者:  Yang H;  Jiang DS;  Le LC;  Zhang SM;  Wu LL
收藏  |  浏览/下载：46/3  |  提交时间：2011/07/05

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