Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes

	Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes
	Le LC (Le, L. C.) ; Zhao DG (Zhao, D. G.) ; Jiang DS (Jiang, D. S.) ; Zhang SM (Zhang, S. M.) ; Yang H (Yang, H.) ; Li L (Li, L.) ; Wu LL (Wu, L. L.) ; Chen P (Chen, P.) ; Liu ZS (Liu, Z. S.) ; Li ZC (Li, Z. C.) ; Fan YM (Fan, Y. M.) ; Zhu JJ (Zhu, J. J.) ; Wang H (Wang, H.)
刊名	applied physics letters
	2012
卷号	101 期号:25 页码:252110
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2013-03-20
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23736]
专题	半导体研究所_光电子研究发展中心
推荐引用方式 GB/T 7714	Le LC ,Zhao DG ,Jiang DS ,et al. Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes[J]. applied physics letters,2012,101(25):252110.
APA	Le LC .,Zhao DG .,Jiang DS .,Zhang SM .,Yang H .,...&Wang H .(2012).Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes.applied physics letters,101(25),252110.
MLA	Le LC ,et al."Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes".applied physics letters 101.25(2012):252110.