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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 学科主题：光电子学    内容类型：会议论文    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Hydrogen sensors based on Pt-AlGN/AIN/GaN Schottky diode - art. no. 68291R 会议论文 conference on advanced materials and devices for sensing and imaging iii, beijing, peoples r china, nov 12-14, 2007 Wang, XH; Wan, XL; Xiao, HL; Feng, C; Way, BZ; Yang, CB; Wang, JX; Wang, CM; Ran, JX; Hu, GX; Li, JM 收藏  |  浏览/下载：30/0  |  提交时间：2010/03/09 hydrogen sensor  AlGaN/GaN heterostructure  Schottky diode   Defect influence on luminescence efficiency of GaN-based LEDs 会议论文 11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005 Li SP (Li Shuping); Fang ZL (Fang Zhilai); Chen HY (Chen Hangyang); Li JC (Li Jinchai); Chen XH (Chen Xiaohong); Yuan XL (Yuan Xiaoli); Sekiguchi T (Sekiguchi Takashi); Wang QM (Wang Qiming); Kang JY (Kang Junyong) 收藏  |  浏览/下载：471/18  |  提交时间：2010/03/29 defects   MMI optical couplers and switches with SOI technology 会议论文 6th chinese optoelectronics symposium, kowloon, peoples r china, sep 12-14, 2003 Yu JZ; Wang XL; Liu JW; Yan QF; Xia JS; Fan ZC; Wang ZT; Chen SW 收藏  |  浏览/下载：20/0  |  提交时间：2010/10/29 WAVE-GUIDES   Influences of initial buffer layer deposition on electrical and optical properties in cubic GaN grown on GaAs(100) by metalorganic chemical vapor deposition 会议论文 1st asian conference on chemical vapour deposition, shanghai, peoples r china, may 10-13, 1999 作者:  Zhao DG 收藏  |  浏览/下载：6/0  |  提交时间：2010/11/15 cubic GaN  buffer layer  atomic force microscopy  reflection high-energy electron diffraction  MOVPE