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Resistive switching and electrical control of ferromagnetism in a Ag/HfO2/Nb:SrTiO3/Ag resistive random access memory (RRAM) device at room temperature 期刊论文
Journal of Physics Condensed Matter, 2016, 卷号: 28, 期号: 5
作者:  Ren, Shaoqing;  Zhu, Gengchang;  Xie, Jihao;  Bu, Jianpei;  Qin, Hongwei
收藏  |  浏览/下载:4/0  |  提交时间:2019/12/16
Resistive switching and electrical control of ferromagnetism in a Ag/HfO2/Nb:SrTiO3/Ag resistive random access memory (RRAM) device at room temperature 期刊论文
JOURNAL OF PHYSICS-CONDENSED MATTER, 2016, 卷号: 28, 期号: 5
作者:  Ren, Shaoqing;  Zhu, Gengchang;  Xie, Jihao;  Bu, Jianpei;  Qin, Hongwei
收藏  |  浏览/下载:3/0  |  提交时间:2019/12/17


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