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Enhanced photoluminescence of strained Ge with a delta-doping SiGe layer on silicon and silicon-on-insulator 期刊论文
APPLIED PHYSICS LETTERS, 2009, 卷号: 95, 期号: 25, 页码: 251102-251102
Li,C; Chen,YH; Zhou,ZW; Lai,HK; Chen,SY
收藏  |  浏览/下载:14/0  |  提交时间:2012/03/24
Enhanced photoluminescence of strained Ge with a delta-doping SiGe layer on silicon and silicon-on-insulator 期刊论文
APPLIED PHYSICS LETTERS, 2009, 卷号: 95, 期号: 25, 页码: 251102
Li, C; Chen, YH; Zhou, ZW; Lai, HK; Chen, SY
收藏  |  浏览/下载:10/0  |  提交时间:2013/05/10


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