Enhanced photoluminescence of strained Ge with a delta-doping SiGe layer on silicon and silicon-on-insulator

	Enhanced photoluminescence of strained Ge with a delta-doping SiGe layer on silicon and silicon-on-insulator
	Li,C ; Chen,YH ; Zhou,ZW ; Lai,HK ; Chen,SY
刊名	APPLIED PHYSICS LETTERS
	2009
卷号	95 期号:25 页码:251102-251102
关键词	ROOM-TEMPERATURE GERMANIUM GAIN
ISSN号	0003-6951
通讯作者	Li, C, Xiamen Univ, Dept Phys, Semicond Photon Res Ctr, Xiamen 361005, Fujian, Peoples R China
学科主题	Physics ; Applied
收录类别	SCI
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/94875]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Li,C,Chen,YH,Zhou,ZW,et al. Enhanced photoluminescence of strained Ge with a delta-doping SiGe layer on silicon and silicon-on-insulator[J]. APPLIED PHYSICS LETTERS,2009,95(25):251102-251102.
APA	Li,C,Chen,YH,Zhou,ZW,Lai,HK,&Chen,SY.(2009).Enhanced photoluminescence of strained Ge with a delta-doping SiGe layer on silicon and silicon-on-insulator.APPLIED PHYSICS LETTERS,95(25),251102-251102.
MLA	Li,C,et al."Enhanced photoluminescence of strained Ge with a delta-doping SiGe layer on silicon and silicon-on-insulator".APPLIED PHYSICS LETTERS 95.25(2009):251102-251102.