QQ客服 官方微博 反馈留言

浏览/检索结果: 共26条，第1-10条 帮助 限定条件 发表日期：2006    学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Correlation between optical and electrical properties in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates 期刊论文 journal of applied physics, 2006, 卷号: 100, 期号: 3, 页码: art.no.033705 Cui LJ (Cui L. J.); Zeng YP (Zeng Y. P.); Wang BQ (Wang B. Q.); Zhu ZP (Zhu Z. P.); Guo SL (Guo S. L.); Chu JH (Chu J. H.) 收藏  |  浏览/下载：28/0  |  提交时间：2010/04/11 QUANTUM-WELL STRUCTURES  PHOTOLUMINESCENCE SPECTRA  HEMTS   Evolution of wetting layer of InAs/GaAs quantum dots studied by reflectance difference spectroscopy 期刊论文 applied physics letters, 2006, 卷号: 88, 期号: 7, 页码: art.no.071903 作者:   收藏  |  浏览/下载：547/12  |  提交时间：2010/04/11 GROWTH  INAS  GAAS  SURFACES   Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy 期刊论文 journal of crystal growth, 2006, 卷号: 293, 期号: 2, 页码: 291-293 Cui LJ (Cui L. J.); Zeng YP (Zeng Y. P.); Wang BQ (Wang B. Q.); Zhu ZP (Zhu Z. P.) 收藏  |  浏览/下载：20/0  |  提交时间：2010/04/11 characterization  point defects  molecular beam epitaxy  semiconducting gallium compounds  semiconducting indium compounds  semiconducting ternary compounds  1.55 MU-M  QUANTUM-WELLS  TEMPERATURE  GAAS   MBE InAs quantum dots grown on metamorphic InGaAs for long wavelength emitting 期刊论文 physica e-low-dimensional systems & nanostructures, 2006, 卷号: 35, 期号: 1, 页码: 194-198 Jiao YH (Jiao Y. H.); Wu J (Wu J.); Xu B (Xu B.); Jin P (Jin P.); Hu LJ (Hu L. J.); Liang LY (Liang L. Y.); Wang ZG (Wang Z. G.) 收藏  |  浏览/下载：35/0  |  提交时间：2010/04/11 metamorphic  long wavelength  quantum dots  molecular beam epitaxy  MOLECULAR-BEAM EPITAXY  CHEMICAL-VAPOR-DEPOSITION  1.3 MU-M  GAAS  EMISSION  RANGE  ISLANDS  ARRAYS  LASERS   Comparison of valence band x-ray photoelectron spectrum between Al-N-codoped and N-doped ZnO films 期刊论文 applied physics letters, 2006, 卷号: 88, 期号: 6, 页码: art.no.602110 作者:  Han XX;  Wei HY 收藏  |  浏览/下载：710/6  |  提交时间：2010/04/11 P-TYPE CONDUCTION  THIN-FILMS  OHMIC CONTACTS   The improvement of thick oxidized porous silicon layer growth process - art. no. 60290S 会议论文 20th congress of the international-commission-for-optics, changchun, peoples r china, aug 21-26, 2005 Li J; An JM; Wang HJ; Xia JL; Gao DS; Hu XW 收藏  |  浏览/下载：176/36  |  提交时间：2010/03/29 porous silicon   Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth 期刊论文 materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 31-35 Zhao C (Zhao C.); Chen YH (Chen Y. H.); Zhao M (Zhao Man); Zhang CL (Zhang C. L.); Xu B (Xu B.); Yu LK (Yu L. K.); Sun J (Sun J.); Lei W (Lei W.); Wang ZG (Wang Z. G.) 收藏  |  浏览/下载：31/0  |  提交时间：2010/04/11 Monte Carlo simulation  molecular beam epitaxy  kinetic effects  quantum dot  LAYER   ZnO thin films on Si(111) grown by pulsed laser deposition from metallic Zn target 期刊论文 applied surface science, 2006, 卷号: 253, 期号: 2, 页码: 841-845 Zhao J (Zhao Jie); Hu LZ (Hu Lizhong); Wang ZY (Wang Zhaoyang); Sun J (Sun Jie); Wang ZJ (Wang Zhijun) 收藏  |  浏览/下载：24/0  |  提交时间：2010/04/11 ZnO  pulsed laser deposition  oxygen pressure  annealing  X-ray diffraction  photoluminescence  ULTRAVIOLET EMISSION  ROOM-TEMPERATURE  ZINC-OXIDE   Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition 会议论文 international conference on silicon carbide and related materials (icscrm 2005), pittsburgh, pa, sep 18-23, 2005 Sun, GS (Sun, Guosheng); Ning, J (Ning, Jin); Gong, QC (Gong, Quancheng); Gao, X (Gao, Xin); Wang, L (Wang, Lei); Liu, XF (Liu, Xingfang); Zeng, YP (Zeng, Yiping); Li, JM (Li, Jinmin) 收藏  |  浏览/下载：100/29  |  提交时间：2010/03/29 homoepitaxial growth  low-pressure hot-wall CVD  structural and optical characteristics  intentional doping  Schottky barrier diodes   Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots 会议论文 15th international conferene on dynamical processes in excited states of solids, shanghai, peoples r china, aug 01-05, 2005 作者:  Jin P 收藏  |  浏览/下载：159/26  |  提交时间：2010/03/29 quantum dots