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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 发表日期：2004    内容类型：会议论文    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Study of infrared luminescence from Er-implanted GaN films 会议论文 international conference on materials for advanced technologies, singapore, singapore, dec 07-12, 2003 Chen WD; Song SF; Zhu JJ; Wang XL; Chen CY; Hsu CC 收藏  |  浏览/下载：24/0  |  提交时间：2010/11/15 doping  metalorganic chemical vapor deposition  molecular beam epitaxy  gallium compounds  semiconducting gallium compounds  ERBIUM   Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy 会议论文 10th international conference on defects - recognition, imaging and physics in semiconductors (drip 10), batz sur mer, france, sep 29-oct 02, 2003 作者:  Ye XL;  Xu B 收藏  |  浏览/下载：11/0  |  提交时间：2010/10/29 SHORT-PERIOD SUPERLATTICES  RAMAN-SCATTERING  QUANTUM-WELLS  GROWTH  ROUGHNESS  SEGREGATION  ALAS/GAAS  ALAS  GAAS   Controlled growth of III-V compound semiconductor nano-structures and their application in quantum-devices 会议论文 13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004 作者:  Xu B;  Ye XL;  Jin P 收藏  |  浏览/下载：92/22  |  提交时间：2010/03/29 DOTS   Effect of noncoherent islands on the optical properties of the 1.3 mu m InAs/GaAs quantum dots during rapid thermal annealing 会议论文 13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004 作者:  Xu B;  Jin P;  Ye XL 收藏  |  浏览/下载：82/12  |  提交时间：2010/03/29 1.3 MU-M   Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures 会议论文 international conference on materials for advanced technologies, singapore, singapore, dec 07-12, 2003 作者:  Han PD 收藏  |  浏览/下载：83/1  |  提交时间：2010/10/29 metalorganic chemical vapor deposition  semiconducting III-V materials  DOPED AL(X)GA1-XN/GAN HETEROSTRUCTURES  CARRIER CONFINEMENT  EFFECT TRANSISTORS  PHOTOLUMINESCENCE  MOBILITY  HETEROJUNCTION  INTERFACE  HFETS