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浏览/检索结果: 共11条，第1-10条 帮助 限定条件 发表日期：2002    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Deep levels in semi-insulating inp obtained by annealing under iron phosphide ambiance 期刊论文 Journal of applied physics, 2002, 卷号: 92, 期号: 4, 页码: 1968-1970 作者:  Dong, HW;  Zhao, YW;  Zhang, YH;  Jiao, JH;  Zhao, JQ 收藏  |  浏览/下载：17/0  |  提交时间：2019/05/12 Photoluminescence assessment of undoped semi-insulating inp wafers obtained by annealing in iron phosphide vapour 期刊论文 Semiconductor science and technology, 2002, 卷号: 17, 期号: 6, 页码: 570-574 作者:  Dong, HW;  Zhao, YW;  Lu, HP;  Jiao, JH;  Zhao, JQ 收藏  |  浏览/下载：11/0  |  提交时间：2019/05/12 Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating inp wafers 期刊论文 Materials science and engineering b-solid state materials for advanced technology, 2002, 卷号: 91, 页码: 521-524 作者:  Zhao, YW;  Sun, NF;  Dong, HW;  Jiao, JH;  Zhao, JQ 收藏  |  浏览/下载：19/0  |  提交时间：2019/05/12 Indium phosphide  Semi-insulating  Annealing  Picts  Photoluminescence   Creation and suppression of point defects through a kick-out substitution process of fe in inp 期刊论文 Applied physics letters, 2002, 卷号: 80, 期号: 16, 页码: 2878-2879 作者:  Zhao, YW;  Dong, HW;  Chen, YH;  Zhang, YH;  Jiao, JH 收藏  |  浏览/下载：23/0  |  提交时间：2019/05/12 Fe-diffusion-induced defects in inp annealed in iron phosphide ambient 期刊论文 Japanese journal of applied physics part 1-regular papers short notes & review papers, 2002, 卷号: 41, 期号: 4a, 页码: 1929-1931 作者:  Zhao, YW;  Dong, HW;  Jiao, JH;  Zhao, JQ;  Lin, LY 收藏  |  浏览/下载：18/0  |  提交时间：2019/05/12 Indium phosphide  Annealing  Semi-insulating  Defect  Diffusion   Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers 会议论文 9th international conference on defects: recognition, imaging and physics in semiconductors (drip ix), rimini, italy, sep 24-28, 2001 Zhao YW; Sun NF; Dong HW; Jiao JH; Zhao JQ; Sun TN; Lin LY 收藏  |  浏览/下载：14/0  |  提交时间：2010/11/15 indium phosphide  semi-insulating  annealing  PICTS  photoluminescence  SEMIINSULATING INP  INDIUM-PHOSPHIDE  FE  PHOTOLUMINESCENCE  TEMPERATURE   Creation and suppression of point defects through a kick-out substitution process of Fe in InP 期刊论文 applied physics letters, 2002, 卷号: 80, 期号: 16, 页码: 2878-2879 Zhao YW; Dong HW; Chen YH; Zhang YH; Jiao JH; Zhao JQ; Lin LY; Fung S 收藏  |  浏览/下载：88/2  |  提交时间：2010/08/12 SEMIINSULATING INP  ZN DIFFUSION  COMPLEXES  PHOSPHIDE  MECHANISM  CRYSTALS   Photoluminescence assessment of undoped semi-insulating InP wafers obtained by annealing in iron phosphide vapour 期刊论文 semiconductor science and technology, 2002, 卷号: 17, 期号: 6, 页码: 570-574 Dong HW; Zhao YW; Lu HP; Jiao JH; Zhao JQ; Lin LY 收藏  |  浏览/下载：48/0  |  提交时间：2010/08/12 FE-DOPED INP  SEMIINSULATING INP  ELECTRICAL-PROPERTIES  ROOM-TEMPERATURE  UNIFORMITY  PRESSURE  INGOT   Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers 期刊论文 materials science and engineering b-solid state materials for advanced technology, 2002, 卷号: 91, 期号: 0, 页码: 521-524 Zhao YW; Sun NF; Dong HW; Jiao JH; Zhao JQ; Sun TN; Lin LY 收藏  |  浏览/下载：82/19  |  提交时间：2010/08/12 indium phosphide  semi-insulating  annealing  PICTS  photoluminescence  SEMIINSULATING INP  INDIUM-PHOSPHIDE  FE  PHOTOLUMINESCENCE  TEMPERATURE   Fe-diffusion-induced defects in InP annealed in iron phosphide ambient 期刊论文 japanese journal of applied physics part 1-regular papers short notes & review papers, 2002, 卷号: 41, 期号: 4a, 页码: 1929-1931 Zhao YW; Dong HW; Jiao JH; Zhao JQ; Lin LY 收藏  |  浏览/下载：96/7  |  提交时间：2010/08/12 indium phosphide  annealing  semi-insulating  defect  diffusion  ENCAPSULATED CZOCHRALSKI INP  SEMIINSULATING INP  PHOTO-LUMINESCENCE  INDIUM-PHOSPHIDE  UNDOPED INP  PHOTOLUMINESCENCE  CRYSTALS  PRESSURE