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	Photoluminescence assessment of undoped semi-insulating inp wafers obtained by annealing in iron phosphide vapour
	Dong, HW; Zhao, YW; Lu, HP; Jiao, JH; Zhao, JQ; Lin, LY
刊名	Semiconductor science and technology
	2002-06-01
卷号	17期号:6页码:570-574
ISSN号	0268-1242
通讯作者	Dong, hw()
英文摘要	We have investigated the photoluminescence mapping characteristics of semi-insulating (si) inp wafers obtained by annealing in iron phosphide ambience (fep2-annealed). compared with as-grown fe-doped and undoped si inp wafers prepared by annealing in pure phosphorus vapour (p-annealed), the fep2-annealed st inp wafer has been found to exhibit a better photoluminescence uniformity. radial hall measurements also show that there is a better resistivity uniformity on the fep2-annealed sl inp wafer. when comparing the distribution of deep levels between the annealed wafers measured by optical transient current spectroscopy, we find that the incorporation of iron atoms into the sl inp suppresses the formation of a few defects. the correlation observed in this study implies that annealing in iron phosphorus ambience makes fe atoms diffuse uniformly and occupy the indium site in the sl inp lattice. as it stands, we believe that annealing undoped conductive inp in iron phosphide vapour is an effective means to obtain semi-insulating inp wafers with superior uniformity.
WOS关键词	FE-DOPED INP ; SEMIINSULATING INP ; ELECTRICAL-PROPERTIES ; ROOM-TEMPERATURE ; UNIFORMITY ; PRESSURE ; INGOT
WOS研究方向	Engineering ; Materials Science ; Physics
WOS类目	Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Condensed Matter
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000176642800014
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2429236
专题	半导体研究所
通讯作者	Dong, HW
作者单位	Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Dong, HW,Zhao, YW,Lu, HP,et al. Photoluminescence assessment of undoped semi-insulating inp wafers obtained by annealing in iron phosphide vapour[J]. Semiconductor science and technology,2002,17(6):570-574.
APA	Dong, HW,Zhao, YW,Lu, HP,Jiao, JH,Zhao, JQ,&Lin, LY.(2002).Photoluminescence assessment of undoped semi-insulating inp wafers obtained by annealing in iron phosphide vapour.Semiconductor science and technology,17(6),570-574.
MLA	Dong, HW,et al."Photoluminescence assessment of undoped semi-insulating inp wafers obtained by annealing in iron phosphide vapour".Semiconductor science and technology 17.6(2002):570-574.

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