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Measurement and evaluation of the Single Event Effects of high-performance SerDes circuits 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2021, 卷号: 1012, 页码: 11
作者:  Wang, Shu;  Cai, Chang;  Ning, Bingxu;  He, Ze;  Huang, Zhiqin
收藏  |  浏览/下载:19/0  |  提交时间:2021/12/08
Investigation of single event effect in 28-nm system-on-chip with multi patterns* 期刊论文
CHINESE PHYSICS B, 2020, 卷号: 29, 期号: 10, 页码: 5
作者:  Yang, Wei-Tao;  Li, Yong-Hong;  Guo, Ya-Xin;  Zhao, Hao-Yu;  Li, Yang
收藏  |  浏览/下载:26/0  |  提交时间:2021/12/15
Evaluation Method of Heavy-Ion-Induced Single-Event Upset in 3D-Stacked SRAMs 期刊论文
ELECTRONICS, 2020, 卷号: 9, 期号: 8, 页码: 14
作者:  Zhao, Peixiong;  Liu, Tianqi;  Cai, Chang;  He, Ze;  Li, Dongqing
收藏  |  浏览/下载:14/0  |  提交时间:2021/12/15
Silicon equivalent gas in silicon equivalent proportional counter - Monte Carlo simulations 期刊论文
RADIATION PHYSICS AND CHEMISTRY, 2020, 卷号: 167, 页码: 4
作者:  Chiang, Yueh;  Chao, Tsi-Chian;  Cho, I-Chun;  Lee, Chung-Chi;  Hong, Ji-Hong
收藏  |  浏览/下载:14/0  |  提交时间:2022/01/19
SEE Sensitivity Evaluation for Commercial 16 nm SRAM-FPGA 期刊论文
ELECTRONICS, 2019, 卷号: 8, 期号: 12, 页码: 12
作者:  Cai, Chang;  Gao, Shuai;  Zhao, Peixiong;  Yu, Jian;  Zhao, Kai
收藏  |  浏览/下载:38/0  |  提交时间:2022/01/19
Heavy-ion induced radiation effects in 50 nm NAND floating gate flash memories 期刊论文
MICROELECTRONICS RELIABILITY, 2019, 卷号: 102, 页码: 6
作者:  Yin, Ya-nan;  Liu, Jie;  Liu, Tian-qi;  Ye, Bing;  Ji, Qing-gang
收藏  |  浏览/下载:8/0  |  提交时间:2022/01/19
Design and verification of universal evaluation system for single event effect sensitivity measurement in very-large-scale integrated circuits 期刊论文
IEICE ELECTRONICS EXPRESS, 2019, 卷号: 16, 期号: 10, 页码: 6
作者:  Xu, Liewei;  Cai, Chang;  Liu, Tianqi;  Ke, Lingyun;  Yu, Jun
收藏  |  浏览/下载:67/0  |  提交时间:2019/11/10
Heavy-ion and pulsed-laser single event effects in 130-nm CMOS-based thin/thick gate oxide anti-fuse PROMs 期刊论文
NUCLEAR SCIENCE AND TECHNIQUES, 2019, 卷号: 30, 期号: 5, 页码: 11
作者:  Zhao, Pei-Xiong;  Geng, Chao;  Zhang, Zhan-Gang;  Liu, Jie;  Li, Xiao-Yuan
收藏  |  浏览/下载:60/0  |  提交时间:2019/11/10
Effects of total ionizing dose on single event effect sensitivity of FRAMs 期刊论文
MICROELECTRONICS RELIABILITY, 2019, 卷号: 95, 页码: 1-7
作者:  Ji, Qinggang;  Liu, Jie;  Li, Dongqing;  Liu, Tianqi;  Ye, Bing
收藏  |  浏览/下载:54/0  |  提交时间:2019/11/10


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