Investigation of single event effect in 28-nm system-on-chip with multi patterns*

doi:10.1088/1674-1056/ab99b8

	Investigation of single event effect in 28-nm system-on-chip with multi patterns*
	Yang, Wei-Tao 2,4; Li, Yong-Hong 2; Guo, Ya-Xin 2; Zhao, Hao-Yu 2; Li, Yang 2; Li, Pei 2; He, Chao-Hui 2; Guo, Gang 3; Liu, Jie 1; Yang, Sheng-Sheng 5
刊名	CHINESE PHYSICS B
	2020-10-01
卷号	29 期号:10 页码:5
关键词	system-on-chip heavy ion single event effect
ISSN号	1674-1056
DOI	10.1088/1674-1056/ab99b8
通讯作者	Li, Yong-Hong(yonghongli@mail.xjtu.edu.cn)
英文摘要	Single event effects (SEEs) in a 28-nm system-on-chip (SoC) were assessed using heavy ion irradiations, and susceptibilities in different processor configurations with data accessing patterns were investigated. The patterns included the sole processor (SP) and asymmetric multiprocessing (AMP) patterns with static and dynamic data accessing. Single event upset (SEU) cross sections in static accessing can be more than twice as high as those of the dynamic accessing, and processor configuration pattern is not a critical factor for the SEU cross sections. Cross section interval of upset events was evaluated and the soft error rates in aerospace environment were predicted for the SoC. The tests also indicated that ultra-high linear energy transfer (LET) particle can cause exception currents in the 28-nm SoC, and some even are lower than the normal case.
资助项目	National Natural Science Foundation of China[11575138] ; National Natural Science Foundation of China[11835006] ; National Natural Science Foundation of China[11690040] ; National Natural Science Foundation of China[11690043] ; Innovation Center of Radiation Application[KFZC2019050321] ; Science and Technology on Vacuum Technology and Physics Laboratory, Lanzhou Institute of Physics[ZWK1804] ; Program of China Scholarships Council[201906280343]
WOS研究方向	Physics
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000575330300001
资助机构	National Natural Science Foundation of China ; Innovation Center of Radiation Application ; Science and Technology on Vacuum Technology and Physics Laboratory, Lanzhou Institute of Physics ; Program of China Scholarships Council
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/139718]
专题	中国科学院近代物理研究所
通讯作者	Li, Yong-Hong
作者单位	1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 2.Xi An Jiao Tong Univ, Sch Nucl Sci & Technol, Xian 710049, Peoples R China 3.China Inst Atom Energy, Natl Innovat Ctr Radiat Applicat, Beijing 102413, Peoples R China 4.Politecn Torino, Dipartimento Automat & Informat, I-10129 Turin, Italy 5.Lanzhou Inst Phys, Sci & Technol Vacuum Technol & Phys Lab, Lanzhou 730000, Peoples R China
推荐引用方式 GB/T 7714	Yang, Wei-Tao,Li, Yong-Hong,Guo, Ya-Xin,et al. Investigation of single event effect in 28-nm system-on-chip with multi patterns*[J]. CHINESE PHYSICS B,2020,29(10):5.
APA	Yang, Wei-Tao.,Li, Yong-Hong.,Guo, Ya-Xin.,Zhao, Hao-Yu.,Li, Yang.,...&An, Heng.(2020).Investigation of single event effect in 28-nm system-on-chip with multi patterns*.CHINESE PHYSICS B,29(10),5.
MLA	Yang, Wei-Tao,et al."Investigation of single event effect in 28-nm system-on-chip with multi patterns*".CHINESE PHYSICS B 29.10(2020):5.