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Electrical transport properties of the si-doped cubic boron nitride thin films prepared by in situ cosputtering 期刊论文
Journal of applied physics, 2011, 卷号: 109, 期号: 2, 页码: 5
作者:  Ying, J.;  Zhang, X. W.;  Yin, Z. G.;  Tan, H. R.;  Zhang, S. G.
收藏  |  浏览/下载:15/0  |  提交时间:2019/05/12
Defect-related emission characteristics of nonpolar m-plane gan revealed by selective etching 期刊论文
Journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 141-145
作者:  Wei, T. B.;  Yang, J. K.;  Hu, Q.;  Duan, R. F.;  Huo, Z. Q.
收藏  |  浏览/下载:22/0  |  提交时间:2019/05/12
Cl  Pl  Stacking fault  Hvpe  Gan  Nonpolar  
Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in inn films 期刊论文
Applied physics a-materials science & processing, 2010, 卷号: 99, 期号: 1, 页码: 139-143
作者:  Liu, B.;  Zhang, Z.;  Zhang, R.;  Fu, D. Y.;  Xie, Z. L.
收藏  |  浏览/下载:20/0  |  提交时间:2019/05/12
Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs 期刊论文
physical review b, 2010, 卷号: 82, 期号: 19, 页码: art. no. 193204
Deng HX (Deng Hui-Xiong); Li JB (Li Jingbo); Li SS (Li Shu-Shen); Peng HW (Peng Haowei); Xia JB (Xia Jian-Bai); Wang LW (Wang Lin-Wang); Wei SH (Wei Su-Huai)
收藏  |  浏览/下载:48/0  |  提交时间:2010/12/27
Cluster scattering in two-dimensional electron gas investigated by Born approximation and partial-wave methods 期刊论文
physica e-low-dimensional systems & nanostructures, 2010, 卷号: 43, 期号: 1, 页码: 543-546
Li ZW; Xu XQ; Wang J; Liu JM; Liu XL; Yang SY; Zhu QS; Wang ZG
收藏  |  浏览/下载:67/8  |  提交时间:2011/07/05
Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films 期刊论文
applied physics a-materials science & processing, 2010, 卷号: 99, 期号: 1, 页码: 139-143
Liu B; Zhang Z; Zhang R; Fu DY; Xie ZL; Lu H; Schaff WJ; Song LH; Cui YC; Hua XM; Han P; Zheng YD; Chen YH; Wang ZG
收藏  |  浏览/下载:196/52  |  提交时间:2010/04/28
Binding Energy and Spin-Orbit Splitting of a Hydrogenic Donor Impurity in AlGaN/GaN Triangle-Shaped Potential Quantum Well 期刊论文
nanoscale research letters, 2009, 卷号: 4, 期号: 11, 页码: 1315-1318
Wang J (Wang Jun); Li SS (Li Shu-Shen); Lu YW (Lue Yan-Wu); Liu XL (Liu Xiang-Lin); Yang SY (Yang Shao-Yan); Zhu QS (Zhu Qin-Sheng); Wang ZG (Wang Zhan-Guo)
收藏  |  浏览/下载:277/95  |  提交时间:2010/03/08
Dislocation core effect scattering in a quasitriangle potential well 期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 11, 页码: art. no. 112102
作者:  Wei HY
收藏  |  浏览/下载:236/104  |  提交时间:2010/03/08
Hillocks and hexagonal pits in a thick film grown by hvpe 期刊论文
Microelectronics journal, 2008, 卷号: 39, 期号: 12, 页码: 1556-1559
作者:  Wei, T. B.;  Duan, R. F.;  Wang, J. X.;  Li, J. M.;  Huo, Z. Q.
收藏  |  浏览/下载:13/0  |  提交时间:2019/05/12
Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers 会议论文
1st international symposium on point defect and stoichiometry, sendai, japan, mar 20-22, 2003
Leung BH; Fong WK; Surya C; Lu LW; Ge WK
收藏  |  浏览/下载:22/0  |  提交时间:2010/10/29


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