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Impact of dual field plates on drain current degradation in InAlN/AlN/GaN HEMTs 期刊论文
semiconductor science and technology, 2016, 卷号: 31, 期号: 12, 页码: 125003
Wei Li; Quan Wang; Xiangmi Zhan; Junda Yan; Lijuan Jiang; Haibo Yin; Jiamin Gong; Xiaoliang Wang; Fengqi Liu; Baiquan Li; Zhanguo Wang
收藏  |  浏览/下载：18/0  |  提交时间：2017/03/10
Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN_AlN_GaN heterostructure field-effect transistors 期刊论文
chinese physics b, 2013, 卷号: 22, 期号: 4, 页码: 047102
Cao Zhi-Fang , Lin Zhao-Jun, Lü Yuan-Jie, Luan Chong-Biao and Wang Zhan-Guo
收藏  |  浏览/下载：29/0  |  提交时间：2014/03/18
Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
chinese physics b, 2013, 卷号: 22, 期号: 4, 页码: 047102
Cao Zhi-Fang; Lin Zhao-Jun; Lu Yuan-Jie; Luan Chong-Biao; Wang Zhan-Guo
收藏  |  浏览/下载：28/0  |  提交时间：2013/09/17
Quantum confinement effects and source-to-drain tunneling in ultra-scaled double-gate silicon n-MOSFETs 期刊论文
chinese physics b, 2012, 卷号: 21, 期号: 2, 页码: 27304
Jiang, XW; Li, SS
收藏  |  浏览/下载：8/0  |  提交时间：2013/03/17
Dopant Segregation and Nickel Stanogermanide Contact Formation on p(+) Ge0.947Sn0.053 Source/Drain 期刊论文
ieee electron device letters, 2012, 卷号: 33, 期号: 5, 页码: 634-636
Han, GQ; Su, SJ; Zhou, Q; Guo, PF; Yang, Y; Zhan, CL; Wang, LX; Wang, W; Wang, QM; Xue, CL; Cheng, BW; Yeo, YC
收藏  |  浏览/下载：19/0  |  提交时间：2013/03/17
Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
nanoscale research letters, 2012, 卷号: 7, 页码: 434
Lv YJ (Lv, Yuanjie); Lin ZJ (Lin, Zhaojun); Meng LG (Meng, Lingguo); Luan CB (Luan, Chongbiao); Cao ZF (Cao, Zhifang); Yu YX (Yu, Yingxia); Feng ZH (Feng, Zhihong); Wang ZG (Wang, Zhanguo)
收藏  |  浏览/下载：15/0  |  提交时间：2013/04/02
Low temperature characteristics of algan/gan high electron mobility transistors 期刊论文
European physical journal-applied physics, 2011, 卷号: 56, 期号: 1, 页码: 4
作者:  Lin, D. F.;  Wang, X. L.;  Xiao, H. L.;  Wang, C. M.;  Qiang, L. J.
收藏  |  浏览/下载：19/0  |  提交时间：2019/05/12
Quantum mechanical simulation of electronic transport in nanostructured devices by efficient self-consistent pseudopotential calculation 期刊论文
Journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: 10
作者:  Jiang, Xiang-Wei;  Li, Shu-Shen;  Xia, Jian-Bai;  Wang, Lin-Wang
收藏  |  浏览/下载：16/0  |  提交时间：2019/05/12
Fabrication and characterization of high performance AlGaN/GaN HEMTs on sapphire with silicon nitride passivation 期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 6, 页码: 64001
Zhang, Renping; Yan, Wei; Wang, Xiaoliang; Yang, Fuhua
收藏  |  浏览/下载：28/0  |  提交时间：2012/06/14
Quantum mechanical simulation of electronic transport in nanostructured devices by efficient self-consistent pseudopotential calculation 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: article no.54503
作者:  Jiang XW
收藏  |  浏览/下载：50/2  |  提交时间：2011/07/05

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