Quantum confinement effects and source-to-drain tunneling in ultra-scaled double-gate silicon n-MOSFETs

	Quantum confinement effects and source-to-drain tunneling in ultra-scaled double-gate silicon n-MOSFETs
	Jiang, XW ; Li, SS
刊名	chinese physics b
	2012
卷号	21 期号:2 页码:27304
学科主题	半导体物理
公开日期	2013-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23593]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Jiang, XW,Li, SS. Quantum confinement effects and source-to-drain tunneling in ultra-scaled double-gate silicon n-MOSFETs[J]. chinese physics b,2012,21(2):27304.
APA	Jiang, XW,&Li, SS.(2012).Quantum confinement effects and source-to-drain tunneling in ultra-scaled double-gate silicon n-MOSFETs.chinese physics b,21(2),27304.
MLA	Jiang, XW,et al."Quantum confinement effects and source-to-drain tunneling in ultra-scaled double-gate silicon n-MOSFETs".chinese physics b 21.2(2012):27304.