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Temperature Compensation for Threshold Current and Slope Efficiency of 1.3 mu m InAs/GaAs Quantum-Dot Lasers by Facet Coating Design 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 4, 页码: article no.44201
作者:  Cao YL;  Yang T
收藏  |  浏览/下载:18/0  |  提交时间:2011/07/05
Comprehensive thermal characterization using ruby R fluorescence lines of sapphire and GaNE(2)-high Raman mode from Raman spectra in high-power flip-chip InGaN/GaN LEDs 期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 35, 页码: 355101
Cui M; Zhou TF; Wang MR; Huang J; Huang HJ; Zhang JP; Xu K; Yang H
收藏  |  浏览/下载:28/0  |  提交时间:2012/02/06
Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO2(100) by metal organic chemical vapour deposition 期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 24, 页码: article no.245402
Fu D; Zhang R; Liu B; Xie ZL; Xiu XQ; Gu SL; Lu H; Zheng YD; Chen YH; Wang ZG
收藏  |  浏览/下载:33/2  |  提交时间:2011/07/05
Different growth mechanisms of bimodal in as/gaas qds 期刊论文
Physica e-low-dimensional systems & nanostructures, 2010, 卷号: 43, 期号: 1, 页码: 308-311
作者:  Zhou, G. Y.;  Chen, Y. H.;  Zhou, X. L.;  Xu, B.;  Ye, X. L.
收藏  |  浏览/下载:15/0  |  提交时间:2019/05/12
Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density 期刊论文
journal of physics d-applied physics, 2010, 卷号: 43, 期号: 48, 页码: art. no. 485102
Zhou XL (Zhou X. L.); Chen YH (Chen Y. H.); Jia CH (Jia C. H.); Ye XL (Ye X. L.); Xu B (Xu Bo); Wang ZG (Wang Z. G.)
收藏  |  浏览/下载:18/0  |  提交时间:2010/12/12
High Characteristic Temperature InGaAsP/InP Tunnel Injection Multiple-Quantum-Well Lasers 期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 11, 页码: art. no. 114201
Wang Y (Wang Yang); Qiu YP (Qiu Ying-Ping); Pan JQ (Pan Jiao-Qing); Zhao LJ (Zhao Ling-Juan); Zhu HL (Zhu Hong-Liang); Wang W (Wang Wei)
收藏  |  浏览/下载:23/0  |  提交时间:2010/12/05
Different growth mechanisms of bimodal In As/GaAs QDs 期刊论文
physica e-low-dimensional systems & nanostructures, 2010, 卷号: 43, 期号: 1, 页码: 308-311
作者:  Ye XL;  Zhou XL
收藏  |  浏览/下载:41/3  |  提交时间:2011/07/05
Electroluminescence from Ge on Si substrate at room temperature 期刊论文
applied physics letters, 2009, 卷号: 95, 期号: 9, 页码: art. no. 092102
作者:  Su SJ;  Xue CL
收藏  |  浏览/下载:51/1  |  提交时间:2010/03/08
Photoluminescence energy and fine structure splitting in single quantum dots by uniaxial stress 期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 3, 页码: 1120-1123
Dou, XM; Sun, BQ; Wang, BR; Ma, SS; Zhou, R; Huang, SS; Ni, HQ; Niu, ZC
收藏  |  浏览/下载:50/2  |  提交时间:2010/03/08
Ultrafast carrier dynamics in undoped and p-doped InAs/GaAs quantum dots characterized by pump-probe reflection measurements 期刊论文
journal of applied physics, 2008, 卷号: 103, 期号: 8, 页码: art. no. 083121
Liu, HY; Meng, ZM; Dai, QF; Wu, LJ; Guo, Q; Hu, W; Liu, SH; Lan, S; Yang, T
收藏  |  浏览/下载:52/3  |  提交时间:2010/03/08


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