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High operating temperature pBn barrier mid-wavelength infrared photodetectors and focal plane array based on InAs/InAsSb strained layer superlattices 期刊论文
OPTICS EXPRESS, 2020, 卷号: 28, 期号: 12, 页码: 17611-17619
作者:  Gongrong Deng;   Dongqiong Chen;   Shaopei Yang;   Chaowei Yang;   Jun Yuan;   Wenyun Yang;   Yiyun Zhang
收藏  |  浏览/下载:4/0  |  提交时间:2021/06/16
Growth of Ge1-xSnx/Ge strained-layer superlattices on Si(100) by molecular beam epitaxy 期刊论文
superlattices and microstructures, 2013, 卷号: 64, 页码: 543
Su, SJ; Zhang, DL; Zhang, GZ; Xue, CL; Cheng, BW
收藏  |  浏览/下载:16/0  |  提交时间:2014/04/04
Molecular beam epitaxy growth of GaAs on an offcut Ge substrate 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 1, 页码: article no.18102
作者:  Li MF
收藏  |  浏览/下载:105/7  |  提交时间:2011/07/05
Investigation of ge-si atomic interdiffusion in ge nano-dots multilayer structure by double crystal x-ray diffraction 期刊论文
Journal of materials science & technology, 2007, 卷号: 23, 期号: 3, 页码: 301-303
作者:  Shi, Wenhua;  Zhao, Lei;  Luo, Liping;  Wang, Qiming
收藏  |  浏览/下载:28/0  |  提交时间:2019/05/12
Selective growth of inas islands on patterned gaas (100) substrate 期刊论文
Superlattices and microstructures, 2006, 卷号: 39, 期号: 5, 页码: 446-453
作者:  Cui, CX;  Chen, YH;  Ren, YY;  Xu, B;  Jin, P
收藏  |  浏览/下载:10/0  |  提交时间:2019/05/12
Tuning of emission wavelength of InAs/GaAs quantum dots sandwiched by combination layers 会议论文
2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004
Fang, ZD (Fang, Zhidan); Gong, M (Gong, Meng); Miao, ZH (Miao, Zhenhua); Niu, ZC (Niu, Zhichuan)
收藏  |  浏览/下载:113/32  |  提交时间:2010/03/29
Selective growth of InAs islands on patterned GaAs (100) substrate 期刊论文
superlattices and microstructures, 2006, 卷号: 39, 期号: 5, 页码: 446-453
作者:  Xu B;  Jin P
收藏  |  浏览/下载:92/0  |  提交时间:2010/04/11
Growth and magnetic properties of zincblende CrSb epilayers on relaxed and strained (In, Ga)As buffers 期刊论文
chinese physics letters, 2006, 卷号: 23, 期号: 2, 页码: 493-496
作者:  Zheng YH
收藏  |  浏览/下载:204/0  |  提交时间:2010/04/11
Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy 会议论文
3rd international conference on materials for advanced technologies/9th international conference on advanced materials, singapore, singapore, jul 03-08, 2005
Jiang, DS; Qu, YH; Ni, HQ; Wu, DH; Xu, YQ; Niu, ZC
收藏  |  浏览/下载:110/24  |  提交时间:2010/03/29
Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy 期刊论文
journal of crystal growth, 2006, 卷号: 288, 期号: 1, 页码: 40529
作者:  Wu DH;  Niu ZC;  Jiang DS;  Xu YQ
收藏  |  浏览/下载:81/0  |  提交时间:2010/04/11


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