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CORC

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Possible Luttinger liquid behavior of edge transport in monolayer transition metal dichalcogenide crystals 期刊论文
NATURE COMMUNICATIONS, 2020, 卷号: 11, 期号: 1, 页码: 659
作者:  Guanhua Yang;   Yan Shao;   Jiebin Niu;   Xiaolei Ma;   Congyan Lu;   Wei Wei;   Xichen Chuai;   Jiawei Wang;   Jingchen Cao;   Hao Huang;   Guangwei Xu;   Xuewen Shi;   Zhuoyu Ji;   Nianduan Lu;   Di Geng;   Jing Qi;   Yun Cao;   Zhongliu Liu;   Liwei Liu;   Yuan Huang;   Lei Liao;   Weiqi Dang
收藏  |  浏览/下载：18/0  |  提交时间：2021/12/16
Highly Reproducible Nanolithography by Dynamic Plough of an Atomic-Force Microscope Tip and Thermal-Annealing Treatment 期刊论文
ieee transactions on nanotechnology, 2011, 卷号: 10, 期号: 1, 页码: 53-58
Lu XF; Balocco C; Yang FH; Song AM
收藏  |  浏览/下载：71/7  |  提交时间：2011/07/05
Resonant subband Landau level coupling in symmetric quantum well 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 8, 页码: art. no. 083502
Tung LC (Tung L. -C.); Wu XG (Wu X. -G.); Pfeiffer LN (Pfeiffer L. N.); West KW (West K. W.); Wang YJ (Wang Y. -J.)
收藏  |  浏览/下载：29/0  |  提交时间：2010/12/05
Correcting the systematic error of the density functional theory calculation: the alternate combination approach of genetic algorithm and neural network 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 7, 页码: art. no. 076401
Wang TT (Wang Ting-Ting); Li WL (Li Wen-Long); Chen ZH (Chen Zhang-Hui); Miao L (Miao Ling)
收藏  |  浏览/下载：94/1  |  提交时间：2010/08/17
Electrically controllable RKKY interaction in semiconductor quantum wires 期刊论文
physical review b, 2010, 卷号: 81, 期号: 1, 页码: art. no. 113302
Zhu JJ (Zhu Jia-Ji); Chang K (Chang Kai); Liu RB (Liu Ren-Bao); Lin HQ (Lin Hai-Qing)
收藏  |  浏览/下载：64/0  |  提交时间：2010/04/28
Transport properties in a gated heterostructure with a trapezoidal AlxGa1-xAs barrier layer 期刊论文
physica e-low-dimensional systems & nanostructures, 2009, 卷号: 41, 期号: 8, 页码: 1379-1381
作者:  Liu J;  Zhu H
收藏  |  浏览/下载：73/2  |  提交时间：2010/03/08
HEMT  2DEG  
Effect of Ka-band microwave on the spin dynamics of electrons in a GaAs/Al0.35Ga0.65As heterostructure 期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 19, 页码: art. no. 192107
作者:  Qian X
收藏  |  浏览/下载：80/7  |  提交时间：2010/03/08
The influence of 1 nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure 期刊论文
microelectronics journal, 2008, 卷号: 39, 期号: 5, 页码: 777-781
Guo, LC; Wang, XL; Wang, CM; Mao, HL; Ran, JX; Luo, WJ; Wang, XY; Wang, BZ; Fang, CB; Hu, GX
收藏  |  浏览/下载：94/1  |  提交时间：2010/03/08
Positive magnetoresistance in In0.53Ga0.47As/In0.52Al0.48As quantum well 期刊论文
acta physica sinica, 2008, 卷号: 57, 期号: 8, 页码: 5232-5236
Shang, LY; Lin, T; Zhou, WZ; Li, DL; Gao, HL; Zeng, YP; Guo, SL; Yu, GL; Chu, JH
收藏  |  浏览/下载：86/0  |  提交时间：2010/03/08
Dislocation scattering in AlxGa1-xN/GaN heterostructures 期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 18, 页码: art. no. 182111
Xu, XQ; Liu, XL; Han, XX; Yuan, HR; Wang, J; Guo, Y; Song, HP; Zheng, GL; Wei, HY; Yang, SY; Zhu, QS; Wang, ZG
收藏  |  浏览/下载：61/0  |  提交时间：2010/03/08

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