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科研机构
半导体研究所 [52]
内容类型
期刊论文 [45]
会议论文 [7]
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2011 [3]
2009 [7]
2008 [4]
2006 [3]
2005 [2]
2004 [3]
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半导体材料 [25]
半导体物理 [17]
光电子学 [4]
半导体化学 [2]
半导体器件 [2]
微电子学 [1]
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Nanostructural instability of single-walled carbon nanotubes during electron beam induced shrinkage
期刊论文
carbon, 2011, 卷号: 49, 期号: 9, 页码: 3120-3124
Zhu XF
;
Li LX
;
Huang SL
;
Wang ZG
;
Lu GQ
;
Sun CH
;
Wang LZ
收藏
  |  
浏览/下载:25/3
  |  
提交时间:2011/07/05
IRRADIATION
NANOCAVITY
Infrared transition properties of vanadium dioxide thin films across semiconductor-metal transition
期刊论文
rare metals, 2011, 卷号: 30, 期号: 3, 页码: 247-251
作者:
Li GK
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  |  
浏览/下载:74/2
  |  
提交时间:2011/07/05
vanadium dioxide
infrared transition
diffraction effect
dual ion beam sputtering
annealing
A visible light communication system based on high-power illumination LED lamp
期刊论文
guangdianzi jiguang/journal of optoelectronics laser, 2011, 卷号: 22, 期号: 6, 页码: 803-807
Yang, Yu
;
Liu, Bo
;
Zhang, Jian-Kun
;
Chen, Xiong-Bin
;
Chen, Hong-Da
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  |  
浏览/下载:17/0
  |  
提交时间:2012/06/13
Bit error rate
Computer simulation
Gateways(computer networks)
Lighting
Optical communication
Telecommunication systems
Structure, magnetization, and low-temperature spin dynamic behavior of zincblende Mn-rich Mn(Ga)As nanoclusters embedded in GaAs
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 5, 页码: art. no. 053912
Wang WZ
;
Deng JJ
;
Lu J
;
Sun BQ
;
Wu XG
;
Zhao JH
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  |  
浏览/下载:213/74
  |  
提交时间:2010/03/08
annealing
Curie temperature
ferromagnetic materials
gallium arsenide
III-V semiconductors
magnetic susceptibility
magnetisation
manganese compounds
nanofabrication
nanostructured materials
RKKY interaction
semiconductor thin films
semimagnetic semiconductors
spin dynamics
Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713
作者:
Zhang XW
;
You JB
;
Yin ZG
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  |  
浏览/下载:70/1
  |  
提交时间:2010/03/08
annealing
carrier density
carrier mobility
diffusion
electrical conductivity
electrical resistivity
hydrogen
II-VI semiconductors
impurity states
interstitials
light transmission
plasma materials processing
semiconductor thin films
sputter deposition
vacancies (crystal)
visible spectra
wide band gap semiconductors
zinc compounds
Lattice polarity detection of InN by circular photogalvanic effect
期刊论文
applied physics letters, 2009, 卷号: 95, 期号: 3, 页码: art. no. 031902
Zhang Q
;
Wang XQ
;
He XW
;
Yin CM
;
Xu FJ
;
Shen B
;
Chen YH
;
Wang ZG
;
Ishitani Y
;
Yoshikawa A
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  |  
浏览/下载:66/0
  |  
提交时间:2010/03/08
III-V semiconductors
indium compounds
nondestructive testing
photoconductivity
radiation effects
semiconductor thin films
wide band gap semiconductors
Strain and magnetic anisotropy of as-grown and annealed Fe films on c(4x4) reconstructed GaAs (001) surface
期刊论文
journal of applied physics, 2009, 卷号: 106, 期号: 1, 页码: art. no. 013911
作者:
Chen L
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  |  
浏览/下载:74/0
  |  
提交时间:2010/03/08
annealing
gallium arsenide
iron
magnetic anisotropy
magnetic epitaxial layers
magnetisation
molecular beam epitaxial growth
transmission electron microscopy
X-ray diffraction
Low-temperature magnetotransport behaviors of heavily Mn-doped (Ga,Mn)As films with high ferromagnetic transition temperature
期刊论文
applied physics letters, 2009, 卷号: 95, 期号: 18, 页码: art.no.182505
作者:
Chen L
;
Qian X
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  |  
浏览/下载:84/39
  |  
提交时间:2010/03/08
annealing
Enhanced charge storage characteristics of silicon nanocrystals fabricated by electron-beam coevaporation of Si and SiOx(x=1 or 2)
期刊论文
journal of vacuum science & technology b, 2009, 卷号: 27, 期号: 6, 页码: 2462-2467
Chen C (Chen Chen)
;
Jia R (Jia Rui)
;
Li WL (Li Weilong)
;
Li HF (Li Haofeng)
;
Ye TC (Ye Tianchun)
;
Liu XY (Liu Xinyu)
;
Liu M (Liu Ming)
;
Kasai S (Kasai Seiya)
;
Tamotsu H (Tamotsu Hashizume)
;
Wu NJ (Wu Nanjian)
收藏
  |  
浏览/下载:139/35
  |  
提交时间:2010/03/08
electron beam deposition
Growth and characterization of GaInNAs by molecular beam epitaxy using a nitrogen irradiation method
期刊论文
journal of crystal growth, 2009, 卷号: 311, 期号: 7, 页码: 1723-1727
Zhao H
;
Wang SM
;
Zhao QX
;
Sadeghi M
;
Larsson A
收藏
  |  
浏览/下载:180/35
  |  
提交时间:2010/03/08
Quantum well
Dilute nitride
Rapid thermal annealing
InGaAs
GaInNAs
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