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CORC

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The influence of the 1st aln and the 2nd gan layers on properties of algan/2nd aln/2nd gan/1st aln/1st gan structure 期刊论文
Applied physics a-materials science & processing, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216
作者:  Bi, Yang;  Wang, XiaoLiang;  Yang, CuiBai;  Xiao, HongLing;  Wang, CuiMei
收藏  |  浏览/下载：24/0  |  提交时间：2019/05/12
Electrical transport properties of the si-doped cubic boron nitride thin films prepared by in situ cosputtering 期刊论文
Journal of applied physics, 2011, 卷号: 109, 期号: 2, 页码: 5
作者:  Ying, J.;  Zhang, X. W.;  Yin, Z. G.;  Tan, H. R.;  Zhang, S. G.
收藏  |  浏览/下载：15/0  |  提交时间：2019/05/12
Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 2, 页码: article no.23716
作者:  Yin ZG;  Zhang XW;  Tan HR;  Fan YM;  Zhang SG
收藏  |  浏览/下载：42/3  |  提交时间：2011/07/05
Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment 期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713
作者:  Zhang XW;  You JB;  Yin ZG
收藏  |  浏览/下载：70/1  |  提交时间：2010/03/08
Dislocation core effect scattering in a quasitriangle potential well 期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 11, 页码: art. no. 112102
作者:  Wei HY
收藏  |  浏览/下载：236/104  |  提交时间：2010/03/08
The influence of 1 nm aln interlayer on properties of the al0.3ga0.7n/aln/gan hemt structure 期刊论文
Microelectronics journal, 2008, 卷号: 39, 期号: 5, 页码: 777-781
作者:  Guo, Lunchun;  Wang, Xiaoliang;  Wang, Cuimei;  Mao, Hongling;  Ran, Junxue
收藏  |  浏览/下载：22/0  |  提交时间：2019/05/12
The influence of 1 nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure 期刊论文
microelectronics journal, 2008, 卷号: 39, 期号: 5, 页码: 777-781
Guo, LC; Wang, XL; Wang, CM; Mao, HL; Ran, JX; Luo, WJ; Wang, XY; Wang, BZ; Fang, CB; Hu, GX
收藏  |  浏览/下载：94/1  |  提交时间：2010/03/08
Nitrogen defects and ferromagnetism in Cr-doped dilute magnetic semiconductor AlN from first principles 期刊论文
physical review b, 2008, 卷号: 78, 期号: 19, 页码: art. no. 195206
Shi LJ; Zhu LF; Zhao YH; Liu BG
收藏  |  浏览/下载：217/56  |  提交时间：2010/03/08
Dislocation scattering in AlxGa1-xN/GaN heterostructures 期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 18, 页码: art. no. 182111
Xu, XQ; Liu, XL; Han, XX; Yuan, HR; Wang, J; Guo, Y; Song, HP; Zheng, GL; Wei, HY; Yang, SY; Zhu, QS; Wang, ZG
收藏  |  浏览/下载：61/0  |  提交时间：2010/03/08
Effect of heavy boron doping on the electrical characteristics of sigehbts 期刊论文
Semiconductor science and technology, 2007, 卷号: 22, 期号: 8, 页码: 890-895
作者:  Yao, Fei;  Xue, Chun-Lai;  Cheng, Bu-Wen;  Wang, Qi-Ming
收藏  |  浏览/下载：15/0  |  提交时间：2019/05/12

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