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CORC

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Intercalation of few-layer graphite flakes with fecl3: raman determination of fermi level, layer by layer decoupling, and stability 期刊论文
Journal of the american chemical society, 2011, 卷号: 133, 期号: 15, 页码: 5941-5946
作者:  Zhao, Weijie;  Tan, Ping Heng;  Liu, Jian;  Ferrari, Andrea C.
收藏  |  浏览/下载：18/0  |  提交时间：2019/05/12
Intercalation of Few-Layer Graphite Flakes with FeCl3: Raman Determination of Fermi Level, Layer by Layer Decoupling, and Stability 期刊论文
journal of the american chemical society, 2011, 卷号: 133, 期号: 15, 页码: 5941-5946
作者:  Liu J;  Tan PH
收藏  |  浏览/下载：90/4  |  提交时间：2011/07/05
Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 3, 页码: article no.37102
Hou QF; Wang XL; Xiao HL; Wang CM; Yang CB; Yin HB; Li JM; Wang ZG
收藏  |  浏览/下载：41/4  |  提交时间：2011/07/05
Behavior of pentacene initial nucleation on various dielectrics and its effect on carrier transport in organic field-effect transistor 期刊论文
Journal of nanoscience and nanotechnology, 2010, 卷号: 10, 期号: 11, 页码: 7103-7107
作者:  Qi, Qiong;  Yu, Aifang;  Wang, Liangmin;  Jiang, Chao
收藏  |  浏览/下载：15/0  |  提交时间：2019/05/12
Behavior of Pentacene Initial Nucleation on Various Dielectrics and Its Effect on Carrier Transport in Organic Field-Effect Transistor 期刊论文
journal of nanoscience and nanotechnology, 2010, 卷号: 10, 期号: 11 sp. iss. si, 页码: 7103-7107
Qi QO (Qi Qiong); Yu AF (Yu Aifang); Wang LM (Wang Liangmin); Jiang C (Jiang Chao)
收藏  |  浏览/下载：28/0  |  提交时间：2010/11/30
Thickness dependent dislocation, electrical and optical properties in inn films grown by mocvd 期刊论文
Acta physica sinica, 2009, 卷号: 58, 期号: 5, 页码: 3416-3420
作者:  Zhang Zeng;  Zhang Rong;  Xie Zi-Li;  Liu Bin;  Xiu Xiang-Qian
收藏  |  浏览/下载：25/0  |  提交时间：2019/05/12
Thickness dependent dislocation, electrical and optical properties in InN films grown by MOCVD 期刊论文
acta physica sinica, 2009, 卷号: 58, 期号: 5, 页码: 3416-3420
作者:  Li Y;  Chen P;  Jiang DS;  Wang H;  Wang ZG
收藏  |  浏览/下载：49/4  |  提交时间：2010/03/08
Deep levels in high resistivity GaN detected by thermally stimulated luminescence and first-principles calculations 期刊论文
journal of physics d-applied physics, 2009, 卷号: 42, 期号: 15, 页码: art. no. 155403
作者:  Li JB;  Hou QF
收藏  |  浏览/下载：66/11  |  提交时间：2010/03/08
Deep levels in high resistivity GaN epilayers grown by MOCVD 会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Fang, CB; Wang, XL; Wang, JX; Liu, C; Wang, CM; Hu, GX; Li, JP; Li, CJ
收藏  |  浏览/下载：115/18  |  提交时间：2010/03/29
One-step growth of zno from film to vertically well-aligned nanorods and the morphology-dependent raman scattering 期刊论文
Applied physics letters, 2005, 卷号: 87, 期号: 23, 页码: 3
作者:  Cong, GW;  Wei, HY;  Zhang, PF;  Peng, WQ;  Wu, JJ
收藏  |  浏览/下载：18/0  |  提交时间：2019/05/12

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