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Damage recovery and dopant migration of Eu+ ion implanted KTiOAsO4 crystals 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2018, 卷号: 435, 页码: 209-213
作者:  Wang, Liang-Ling;  Roeder, Robert;  Cui, Xiao-Jun;  Wesch, Werner;  Wendler, Elke
收藏  |  浏览/下载：5/0  |  提交时间：2019/12/11
The effects on gamma-LiAlO2 induced by nuclear energy losses during Ga ions implantation 会议论文
27th International Conference on Atomic Collisions in Solids (ICACS), JUL 24-29, 2016
作者:  Zhang, Jing;  Song, Hong-Lian;  Qiao, Mei;  Yu, Xiao-Fei;  Wang, Tie -Jun
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/31
The Mean Projected Range and Range Straggling of Er Ions Implanted in 6h Silicon Carbide 期刊论文
ADVANCED MATERIALS RESEARCH II, PTS 1 AND 2, 2012, 卷号: 463-464, 页码: 798-801
作者:  Qin, Xi-Feng;  Wang, Hui-Ning;  Ji, Zi-Wu;  Wang, Feng-Xiang;  Fu, Gang
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/23
The mean projected range and range straggling of Yb ions implanted in silicon crystal 期刊论文
NEW MATERIALS AND PROCESSES, PTS 1-3, 2012, 卷号: 476-478, 页码: 1249-1253
作者:  Qin, Xi-Feng;  Wang, Hui-Ning;  Ji, Zi-Wu;  Wang, Feng-Xiang;  Fu, Gang
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/23
Investigation of the inhibiting outdiffusion of erbium atoms to a silicon-on-insulator surface after annealing at high temperature 期刊论文
CHINESE PHYSICS B, 2012, 卷号: 21, 期号: 6
作者:  Qin Xi-Feng;  Li Hong-Zhen;  Li Shuang;  Ji Zi-Wu;  Wang Hui-Ning
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/23
Formation of a highly Erbium doped silicon-on-insulator layer by introducing SiOx on or into a silicon surface 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2012, 卷号: 278, 页码: 1-3
作者:  Qin, Xi-Feng;  Ji, Zi-Wu;  Chen, Ming;  Liu, Xiu-Hong;  Wang, Xue-Lin
收藏  |  浏览/下载：1/0  |  提交时间：2019/12/23
Investigation of the inhibiting outdiffusion of erbium atoms to a silicon-on-insulator surface after annealing at high temperature 期刊论文
Chinese Physics B, 2012, 期号: 06, 页码: 389-392
作者:  Qin XF(秦希峰);  Li HZ(李洪珍);  Li S(李双);  Ji ZW(冀子武);  Wang HN(王绘凝)
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/23
Formation of a highly Erbium doped silicon-on-insulator layer by introducing SiO _x on or into a silicon surface 期刊论文
Nuclear Instruments and Methods in Physics Research, Section B. Beam Interactions with Materials and Atoms, 2012, 页码: 1-3
作者:  Qin, X.-F.;  Ji, Z.-W.;  Chen, M.;  Liu, X.-H.;  Wang, X.-L.
收藏  |  浏览/下载：5/0  |  提交时间：2019/12/23
Structural and optical properties of waveguides in YbVO4 crystals formed by 3.0 MeV Cu2+-ions implantation 期刊论文
OPTICS AND LASER TECHNOLOGY, 2011, 卷号: 43, 期号: 7, 页码: 1138-1142
作者:  Jia, Chuan-Lei;  Zhang, Tong;  Wang, Lei
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/23
Investigation of the lateral spread of erbium ions implanted in silicon crystal 期刊论文
Chinese Physics B, 2010, 卷号: 19, 期号: 11, 页码: 340-343
作者:  Qin XF(秦希峰);  Chen M(陈明);  Wang XL(王雪林);  Liang Y(梁毅);  Zhang SM(张少梅)
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/26

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