CORC

在结果中检索

CORC

浏览/检索结果: 共111条，第1-10条 帮助

限定条件                
已选(0)清除 条数/页：   排序方式：
Recent advances in Ga-based solar-blind photodetectors 期刊论文
Chinese Physics B, 2019, 期号: 02, 页码: 49-57
作者:  Xu MS(徐明升);  Ge L(葛磊);  Han MM(韩明明);  Huang J(黄静);  Xu HY(徐化勇)
收藏  |  浏览/下载：6/0  |  提交时间：2019/12/11
Recent advances in Ga-based solar-blind photodetectors 期刊论文
CHINESE PHYSICS B, 2019, 卷号: 28, 期号: 2, 页码: 49-57
作者:  Xu MS(徐明升);  Ge L(葛磊);  Han MM(韩明明);  Huang J(黄静);  Xu HY(徐化勇)
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/11
Two-dimensional analytical model of AlGaN/GaN HEMTs with a etched algan barrier layer 期刊论文
2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019, 2019
作者:  Guo, Haijun;  Cao, Chao;  Duan, Baoxing
收藏  |  浏览/下载：10/0  |  提交时间：2019/12/11
Two-Dimensional Analytical Model of AlGaN/GaN HEMTs with a Ftched AlGaN Barrier Layer 会议论文
IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), JUN 12-14, 2019
作者:  Guo, Haijun;  Cao, Chao;  Duan, Baoxing
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/31
Effect of gate-source spacing on parasitic source access resistance in AlGaN/GaN heterostructure field-effect transistors 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2018, 卷号: 124, 期号: 5
作者:  Cui, Peng;  Lin, Zhaojun;  Fu, Chen;  Liu, Yan;  Lv, Yuanjie
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/11
A new method to determine the 2DEG density distribution for passivated AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 113, 页码: 160-168
作者:  Fu, Chen;  Lin, Zhaojun;  Cui, Peng;  Lv, Yuanjie;  Zhou, Yang
收藏  |  浏览/下载：5/0  |  提交时间：2019/12/11
Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors 期刊论文
SCIENTIFIC REPORTS, 2018, 卷号: 8
作者:  Cui, Peng;  Lv, Yuanjie;  Liu, Huan;  Cheng, Aijie;  Fu, Chen
收藏  |  浏览/下载：7/0  |  提交时间：2019/12/11
The influence of the PCF scattering on the electrical properties of the AlGaN/AlN/GaN HEMTs after the Si3N4 surface passivation 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2018, 卷号: 124, 期号: 4
作者:  Fu, Chen;  Lin, Zhaojun;  Cui, Peng;  Lv, Yuanjie;  Zhou, Yang
收藏  |  浏览/下载：6/0  |  提交时间：2019/12/11
Effect of Polarization Coulomb Field Scattering on Electrical Properties of the 70-nm Gate-Length AlGaN/GaN HEMTs 期刊论文
SCIENTIFIC REPORTS, 2018, 卷号: 8
作者:  Cui, Peng;  Lv, Yuanjie;  Fu, Chen;  Liu, Huan;  Cheng, Aijie
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/11
Gate Leakage and Breakdown Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Fe Delta-Doped Buffer 期刊论文
NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 2018, 卷号: 10, 期号: 2, 页码: 185-189
作者:  Hao, Meilan;  Wang, Quan;  Jiang, Lijuan;  Feng, Chun;  Chen, Changxi
收藏  |  浏览/下载：11/0  |  提交时间：2019/12/11

©版权所有 ©2017 CSpace - Powered by CSpace