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浏览/检索结果: 共12条，第1-10条 帮助 限定条件 专题：山东大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 A new method to determine the 2DEG density distribution for passivated AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 113, 页码: 160-168 作者:  Fu, Chen;  Lin, Zhaojun;  Cui, Peng;  Lv, Yuanjie;  Zhou, Yang 收藏  |  浏览/下载：5/0  |  提交时间：2019/12/11 AIGaN/AIN/GaN HFETs  2DEG density distribution  Passivation  Polarization Coulomb field scattering   Influence of polarization Coulomb field scattering on high-temperature electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 120, 页码: 389-394 作者:  Liu, Yan;  Lin, Zhaojun;  Cui, Peng;  Fu, Chen;  Lv, Yuanjie 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/11 AlGaN/AlN/GaN HFET  High-temperature electron mobility  Polarization  Coulomb field scattering   Enhanced effect of diffused Ohmic contact metal atoms for device scaling in AlGaN/GaN heterostructure field-effect transistors 期刊论文 SUPERLATTICES AND MICROSTRUCTURES, 2017, 卷号: 103, 页码: 113-120 作者:  Liu, Huan;  Cheng, Aijie;  Lin, Zhaojun;  Cui, Peng;  Liu, Yan 收藏  |  浏览/下载：5/0  |  提交时间：2019/12/11 AIGaN/GaN HFETs  Diffused Ohmic contact metal atoms  Polarization  Coulomb field scattering   Determination of the strain distribution for the Si3N4 passivated AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 SUPERLATTICES AND MICROSTRUCTURES, 2017, 卷号: 111, 页码: 806-815 作者:  Fu, Chen;  Lin, Zhaojun;  Liu, Yan;  Cui, Peng;  Lv, Yuanjie 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/11 AlGaN/AlN/GaN HFETs  Strain distribution  Passivation  Polarization  coulomb field scattering   A method to determine electron mobility of the two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors 期刊论文 SUPERLATTICES AND MICROSTRUCTURES, 2017, 卷号: 110, 页码: 289-295 作者:  Cui, Peng;  Lin, Zhaojun;  Fu, Chen;  Liu, Yan;  Lv, Yuanjie 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/11 AlGaN/GaN HFETs  Electron mobility  Transconductance  Polarization  Coulomb field scattering   Influence of gate width on gate-channel carrier mobility in AlGaN/GaN heterostructure field-effect transistors 期刊论文 SUPERLATTICES AND MICROSTRUCTURES, 2017, 卷号: 111, 页码: 65-72 作者:  Yang, Ming;  Ji, Qizheng;  Gao, Zhiliang;  Zhang, Shufeng;  Lin, Zhaojun 收藏  |  浏览/下载：6/0  |  提交时间：2019/12/12 AlGaN/GaN HFETs  Gate width  Carrier mobility   Determination of the strain distribution for the Si3N4passivated AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 Superlattices and Microstructures, 2017, 卷号: 111, 页码: 806-815 作者:  Fu, Chen;  Lin, Zhaojun;  Liu, Yan;  Cui, Peng;  Lv, Yuanjie 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/12 Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors 期刊论文 SUPERLATTICES AND MICROSTRUCTURES, 2016, 卷号: 100, 页码: 358-364 作者:  Cui, Peng;  Liu, Huan;  Lin, Zhaojun;  Cheng, Aijie;  Liu, Yan 收藏  |  浏览/下载：7/0  |  提交时间：2019/12/17 AlGaN/GaN HFETs  Cap layer thickness  Polarization Coulomb field  scattering   Influence of sapphire substrate thickness on the characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 SUPERLATTICES AND MICROSTRUCTURES, 2015, 卷号: 85, 页码: 43-49 作者:  Yang, Ming;  Lin, Zhaojun;  Zhao, Jingtao;  Wang, Yutang;  Li, Zhiyuan 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/17 AlGaN/AlN/GaN HFETs  Sapphire substrate thickness  Strain   A method to determine the strain of the AlGaN barrier layer under the gate in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 SUPERLATTICES AND MICROSTRUCTURES, 2015, 卷号: 79, 页码: 21-28 作者:  Zhao, Jingtao;  Lin, Zhaojun;  Luan, Chongbiao;  Chen, Quanyou;  Yang, Ming 收藏  |  浏览/下载：6/0  |  提交时间：2019/12/17 AlGaN/AlN/GaN HFETs  Strain  Ohmic contact