CORC

在结果中检索

CORC

浏览/检索结果: 共19条，第1-10条 帮助

限定条件                
已选(0)清除 条数/页：   排序方式：
Interface properties and bias temperature instability with ternary H-Cl-N mixed plasma post-oxidation annealing in 4H-SiC MOS capacitors 期刊论文
APPLIED SURFACE SCIENCE, 2019, 卷号: 488, 页码: 293-302
作者:  Yang, Chao;  Zhang, Fanglong;  Yin, Zhipeng;  Su, Yan;  Qin, Fuwen
收藏  |  浏览/下载：11/0  |  提交时间：2019/12/02
Passivation of SiO2/4H-SiC interface defects via electron cyclotron resonance hydrogen-nitrogen mixed plasma pretreatment for SiC surface combined with post-oxidation annealing 期刊论文
APPLIED SURFACE SCIENCE, 2016, 卷号: 364, 页码: 769-774
作者:  Liu, Bingbing;  Qin, Fuwen;  Wang, Dejun
收藏  |  浏览/下载：10/0  |  提交时间：2019/12/09
Electrical and physical properties of 4H-SiC MOS interface with electron cyclotron resonance microwave nitrogen plasma post-oxidation annealing 期刊论文
PHYSICA B-CONDENSED MATTER, 2014, 卷号: 432, 页码: 89-95
作者:  Zhu, Qiaozhi;  Qin, Fuwen;  Li, Wenbo;  Wang, Dejun
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/09
Improvement of SiO2/4H-SiC interface properties by electron cyclotron resonance microwave nitrogen-hydrogen mixed plasma post-oxidation annealing 期刊论文
APPLIED PHYSICS LETTERS, 2013, 卷号: 103, 页码: -
作者:  Zhu, Qiaozhi;  Qin, Fuwen;  Li, Wenbo;  Wang, Dejun
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/11
Influence of Ar/H-2 ratio on the characteristics of boron-doped nc-Si:H films prepared by electron cyclotron resonance plasma-enhanced chemical vapor deposition 期刊论文
8th Asian-European International Conference on Plasma Surface Engineering (AEPSE), 2013, 卷号: 228, 页码: S412-S415
作者:  Zhang, Xueyu;  Wu, Aimin;  Shi, Shaofei;  Qin, Fuwen
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/11
Effects of Low Temperature Electronic Cyclotron Resonance Hydrogen Plasma Treatment and Annealing on the Electrical Properties of Ti and Ni Contacts to 4H-SiC 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 卷号: 51, 页码: -
作者:  Huang, Lingqin;  Zhu, Qiaozhi;  Gao, Mingchao;  Qin, Fuwen;  Wang, Dejun
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/13
Influence of Ar/H-2 ratio on the characteristics of phosphorus-doped hydrogenated nanocrystalline silicon films prepared by electron cyclotron resonance plasma-enhanced chemical vapor deposition 期刊论文
3rd International Conference on Microelectronics and Plasma Technology (ICMAP), 2012, 卷号: 521, 页码: 181-184
作者:  Zhang, Xueyu;  Wu, Aimin;  Shi, Shaofei;  Qin, Fuwen;  Bian, Jiming
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/18
Influence of Ar/H2 ratio on the characteristics of phosphorus-doped hydrogenated nanocrystalline silicon films prepared by electron cyclotron resonance plasma-enhanced chemical vapor deposition 期刊论文
thin solid film, 2012, 卷号: 521, 页码: 181-184
作者:  Wu AM(吴爱民);  Qin FW(秦福文);  Bian JM(边继明)
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/18
Cleaning of SiC surfaces by low temperature ECR microwave hydrogen plasma 期刊论文
APPLIED SURFACE SCIENCE, 2011, 卷号: 257, 页码: 10172-10176
作者:  Huang, Lingqin;  Zhu, Qiaozhi;  Gao, Mingchao;  Qin, Fuwen;  Wang, Dejun
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/18
Numerical study on uniformity of electron cyclotron resonance plasma density 期刊论文
ACTA PHYSICA SINICA, 2011, 卷号: 60, 页码: -
作者:  Gao Bi-Rong;  Liu Yue
收藏  |  浏览/下载：1/0  |  提交时间：2019/12/18

©版权所有 ©2017 CSpace - Powered by CSpace