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Anomalous random telegraph noise in nanoscale transistors as direct evidence of two metastable states of oxide traps 期刊论文
SCIENTIFIC REPORTS, 2017
Guo, Shaofeng; Wang, Runsheng; Mao, Dongyuan; Wang, Yangyuan; Huang, Ru
收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03
Atomic-Layer-Deposition Growth of an Ultrathin HfO2 Film on Graphene 期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2017
Xiao, Mengmeng; Qiu, Chenguang; Zhang, Zhiyong; Peng, Lian-Mao
收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03
Solution-Processable, Low-Voltage, and High-Performance Monolayer Field-Effect Transistors with Aqueous Stability and High Sensitivity 期刊论文
advanced materials, 2015
Chen, Hongliang; Dong, Shaohua; Bai, Meilin; Cheng, Nongyi; Wang, Hao; Li, Mingliang; Du, Huiwen; Hu, Shuxin; Yang, Yanlian; Yang, Tieying; Zhang, Fan; Gu, Lin; Meng, Sheng; Hou, Shimin; Guo, Xuefeng
收藏  |  浏览/下载：2/0  |  提交时间：2015/11/10
Low-Voltage a-InGaZnO Thin-Film Transistors With Anodized Thin HfO2 Gate Dielectric 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2015
Shao, Yang; Xiao, Xiang; He, Xin; Deng, Wei; Zhang, Shengdong
收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03
New Framework for the random charging/discharging of oxide traps in HfO2 gate dielectric: Ab-initio simulation and experimental evidence 其他
2015-01-01
Ji, Jingwei; Qiu, Yingxin; Guo, Shaofeng; Wang, Runsheng; Ren, Pengpeng; Hao, Peng; Huang, Ru
收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03
高κ栅介质SOI nMOSFET正偏压温度不稳定性的实验研究 期刊论文
北京大学学报 自然科学版, 2014
李哲; 吕垠轩; 何燕冬; 张钢刚
收藏  |  浏览/下载：7/0  |  提交时间：2015/11/13
High Performance Aluminum-Doped ZnO Thin Film Transistors with High-K Gate Dielectrics Fabricated at Low Temperature 期刊论文
sensor letters, 2013
Han, Dedong; Cai, Jian; Wang, Wei; Wang, Liangliang; Wang, Yi; Liu, Lifeng; Zhang, Shengdong
收藏  |  浏览/下载：4/0  |  提交时间：2015/11/13
High performance aluminum-doped ZnO thin film transistors with high-K gate dielectrics fabricated at low temperature 其他
2013-01-01
Han, Dedong; Cai, Jian; Wang, Wei; Wang, Liangliang; Wang, Yi; Liu, Lifeng; Zhang, Shengdong
收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03
Investigation of an anomalous hump in gate current after negative-bias temperature-instability in HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors 期刊论文
应用物理学快报, 2013
Ho, Szu-Han; Chang, Ting-Chang; Wu, Chi-Wei; Lo, Wen-Hung; Chen, Ching-En; Tsai, Jyun-Yu; Liu, Guan-Ru; Chen, Hua-Mao; Lu, Ying-Shin; Wang, Bin-Wei; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Sze, Simon M.
收藏  |  浏览/下载：6/0  |  提交时间：2015/11/11
Erratum: Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress (Applied Physics Letters (2011) 99 (103510)) 期刊论文
应用物理学快报, 2011
Iglesias, V.; Lanza, M.; Zhang, K.; Bayerl, A.; Porti, M.; Nafra, M.; Aymerich, X.; Benstetter, G.; Shen, Z.Y.; Bersuker, G.
收藏  |  浏览/下载：1/0  |  提交时间：2015/11/12

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