QQ客服 官方微博 反馈留言

浏览/检索结果: 共9条，第1-9条 帮助 限定条件 专题：北京大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Impact of gate coupling and misalignment on performance of double-gate organic thin film transistors 期刊论文 JAPANESE JOURNAL OF APPLIED PHYSICS, 2015 Han, Jingwen; Sun, Lei; Xu, Hao; Zhang, Yibo; Zhang, Shengdong; Wang, Yi 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 FIELD-EFFECT TRANSISTORS  CONTACT RESISTANCE  THRESHOLD VOLTAGE  PENTACENE  MOBILITY  DIELECTRICS  SIMULATION  TRANSPORT  DEVICE   Impact of gate coupling and misalignment on performance of double-gate organic thin film transistors 其他 2015-01-01 Han, Jingwen; Sun, Lei; Xu, Hao; Zhang, Yibo; Zhang, Shengdong; Wang, Yi 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/04 FIELD-EFFECT TRANSISTORS  CONTACT RESISTANCE  THRESHOLD VOLTAGE  PENTACENE  MOBILITY  DIELECTRICS  SIMULATION  TRANSPORT  DEVICE   VDNROM: A novel four-bits-per-cell vertical channel dual-nitride-trapping- layer ROM for high density flash memory applications 其他 2007-01-01 Zhou, Falong; Cai, Yimao; Huang, Ru; Li, Yan; Shan, Xiaonan; Liu, Jia; Guo, Ao; Zhang, Xing; Wang, Yangyuan 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/10 VDNROM: A novel four-physical-bits/cell vertical channel dual-nitride-trapping-layers ROM for high density flash memory applications 其他 2007-01-01 Zhou, Falong; Cai, Ylinao; Huang, Ru; Li, Yan; Shan, Xiaonan; Liu, Jla; Guo, Ao; Zhang, Xing; Wang, Yangyuan 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/12 flash memory  nitride-trapping-layer  SONOS  NROM  four-bits-per-cell  vertical channel   VDNROM: A novel four-physical-bits/cell vertical channel dual-nitride-trapping-layers ROM for high density flash memory applications 期刊论文 Solid-State Electronics, 2007 Zhou, Falong; Cai, Yimao; Huang, Ru; Li, Yan; Shan, Xiaonan; Liu, Jia; Guo, Ao; Zhang, Xing; Wang, Yangyuan 收藏  |  浏览/下载：6/0  |  提交时间：2017/12/03 Extraction of equivalent oxide thickness for HfO2 high k gate dielectrics 期刊论文 pan tao ti hsueh paochinese journal of semiconductors, 2006 Chen, Yong; Zhao, Jianming; Han, Dedong; Kang, Jinfeng; Han, Ruqi 收藏  |  浏览/下载：4/0  |  提交时间：2015/11/17 VDNROM: A novel four-bits-per-cell vertical channel dual-nitride-trapping-layer ROM for high density flash memory applications 其他 2006-01-01 Zhou, Falong; Cai, Yimao; Huang, Ru; Li, Yan; Shan, Xiaonan; Liu, Jia; Guo, Ao; Zhang, Xing; Wang, Yangyuan 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/13 Charactcristics of sub-1 nm CVID HfO2 gate dielectrics with HfN electrodcs for advanccd CMOS applications 其他 2004-01-01 Kang, JF; Yu, HY; Ren, C; Wang, XP; Li, MF; Chan, DSH; Liu, XY; Han, RQ; Wang, YY; Kwong, DL 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/13 Characteristics of sub-1 nm CVD HfO2 gate dielectrics with HfN electrodes for advanced CMOS applications 其他 2004-01-01 Kang, J.F.; Yu, H.Y.; Ren, C.; Wang, X.P.; Li, M.-F.; Chan, D.S.H.; Liu, X.Y.; Han, R.Q.; Wang, Y.Y.; Kwong, D.-L. 收藏  |  浏览/下载：4/0  |  提交时间：2015/11/13