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ALD Al2O3 passivation of Lg=100 nm metamorphic InAlAs/InGaAs HEMTs with Si-doped Schottky layers on GaAs substrates 期刊论文
solid state electronics, 2017
作者:  Wang SK(王盛凯);  Chang HD(常虎东);  Sun B(孙兵);  Liu HG(刘洪刚);  Niu JB(牛洁斌)
收藏  |  浏览/下载：8/0  |  提交时间：2018/05/16
Solid-state tellurium doping of AllnP and its application to photovoltaic devices grown by molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2015, 卷号: 413, 页码: 5
作者:  Dai, P(代盼);  Tan, M(谭明);  Wu, YY(吴渊源);  Ji, L(季莲);  Bian, LF(边历峰)
收藏  |  浏览/下载：20/0  |  提交时间：2015/12/31
Structural and optical properties of self-catalytic GaAs:Mn nanowires grown by molecular beam epitaxy on silicon substrates 期刊论文
nanoscale, 2013
Gas, Katarzyna; Sadowski, Janusz; Kasama, Takeshi; Siusys, Aloyzas; Zaleszczyk, Wojciech; Wojciechowski, Tomasz; Morhange, Jean-Francois; Altintas, Abdulmenaf; Xu, H. Q.; Szuszkiewicz, Wojciech
收藏  |  浏览/下载：4/0  |  提交时间：2015/11/11
TM掺杂的Ⅲ-Ⅴ族稀磁半导体电磁性质的第一原理计算 期刊论文
http://epub.edu.cnki.net/grid2008/brief/detailj.aspx?filename=wlxb200602070&dbcode=CJFQ&dbname=CJFQ2006, 2012, 2012
林秋宝; 李仁全; 曾永志; 朱梓忠
收藏  |  浏览/下载：3/0  |  提交时间：2017/06/19
First-principles study on the electronic structure of dilute magnetic semiconductor Ga(1-x)Cr(x)P in zinc-blende phase 期刊论文
Physica Status Solidi B-Basic Solid State Physics, 2011, 卷号: 248, 期号: 5, 页码: 1258-1263
H. M. Huang; S. J. Luo; K. L. Yao
收藏  |  浏览/下载：13/0  |  提交时间：2012/04/13
Band-tail shape and transport near the metal-insulator transition in si-doped al0.3ga0.7as 期刊论文
Physical review b, 2010, 卷号: 82, 期号: 12, 页码: 6
作者:  Misuraca, Jennifer;  Trbovic, Jelena;  Lu, Jun;  Zhao, Jianhua;  Ohno, Yuzo
收藏  |  浏览/下载：24/0  |  提交时间：2019/05/12
Band-tail shape and transport near the metal-insulator transition in Si-doped 期刊论文
physical review b, 2010, 卷号: 82, 期号: 12, 页码: art. no. 125202
Misuraca J (Misuraca Jennifer); Trbovic J (Trbovic Jelena); Lu J (Lu Jun); Zhao JH (Zhao Jianhua); Ohno Y (Ohno Yuzo); Ohno H (Ohno Hideo); Xiong P (Xiong Peng); von Molnar S (von Molnar Stephan)
收藏  |  浏览/下载：26/0  |  提交时间：2010/10/11
The formation and electronic structures of 3d transition-metal atoms doped in silicon nanowires 期刊论文
Journal of applied physics, 2008, 卷号: 104, 期号: 8, 页码: 6
作者:  Xu, Qiang;  Li, Jingbo;  Li, Shu-Shen;  Xia, Jian-Bai
收藏  |  浏览/下载：13/0  |  提交时间：2019/05/12
The formation and electronic structures of 3d transition-metal atoms doped in silicon nanowires 期刊论文
journal of applied physics, 2008, 卷号: 104, 期号: 8, 页码: art. no. 084307
Xu, Q; Li, JB; Li, SS; Xia, JB
收藏  |  浏览/下载：75/1  |  提交时间：2010/03/08
Influence of deep level defects on electrical compensation in semi-insulating inp materials 期刊论文
Acta physica sinica, 2007, 卷号: 56, 期号: 2, 页码: 1167-1171
作者:  Yang Jun;  Zhao You-Wen;  Dong Zhi-Yuan;  Deng Ai-Hong;  Miao Shan-Shan
收藏  |  浏览/下载：21/0  |  提交时间：2019/05/12

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