ALD Al2O3 passivation of Lg=100 nm metamorphic InAlAs/InGaAs HEMTs with Si-doped Schottky layers on GaAs substrates

	ALD Al2O3 passivation of Lg=100 nm metamorphic InAlAs/InGaAs HEMTs with Si-doped Schottky layers on GaAs substrates
	Wang SK(王盛凯); Chang HD(常虎东); Sun B(孙兵); Liu HG(刘洪刚); Niu JB(牛洁斌)
刊名	solid state electronics
	2017-10-06
文献子类	期刊论文
内容类型	期刊论文
源URL	[http://159.226.55.106/handle/172511/18010]
专题	微电子研究所_高频高压器件与集成研发中心
推荐引用方式 GB/T 7714	Wang SK,Chang HD,Sun B,et al. ALD Al2O3 passivation of Lg=100 nm metamorphic InAlAs/InGaAs HEMTs with Si-doped Schottky layers on GaAs substrates[J]. solid state electronics,2017.
APA	王盛凯,常虎东,孙兵,刘洪刚,&牛洁斌.(2017).ALD Al2O3 passivation of Lg=100 nm metamorphic InAlAs/InGaAs HEMTs with Si-doped Schottky layers on GaAs substrates.solid state electronics.
MLA	王盛凯,et al."ALD Al2O3 passivation of Lg=100 nm metamorphic InAlAs/InGaAs HEMTs with Si-doped Schottky layers on GaAs substrates".solid state electronics (2017).