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CORC

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Control of N/N2 species ratio in NO plasma for p-type doping of ZnO (EI CONFERENCE) 会议论文
Chen X.; Zhang Z.; Yao B.; Jiang M.; Wang S.; Li B.; Shan C.; Liu L.; Zhao D.; Shen D.
收藏  |  浏览/下载：14/0  |  提交时间：2013/03/25
Nitrogen-doped ZnO thin films were grown on c-plane sapphire (Al 2O3) substrates via plasma-assisted molecular beam epitaxy using plasma activated nitric oxide (NO) as the oxygen source and dopant. X-ray diffraction measurements indicate that a small NO flux benefits the crystal quality of the thin films. Hall effect measurements indicate that the electron density of the ZnO films decreases gradually with decreasing NO flux  and the conduction reverses to p-type at a certain flux. Optical emission spectra indicate that the N atom content in the NO plasma increases with decreasing NO flux  and the origin of this is discussed. X-ray photoelectron spectroscopy measurements demonstrate that the number of N atom occupied O sites in the ZnO lattice increases correspondingly. 2011 American Institute of Physics.  
Phase-field modeling of solute trapping in single-phase alloys during directional solidification 会议论文
作者:  Xiao, Rongzhen;  Wang, Zhiping;  Zhu, Changsheng;  Li, Wensheng;  Feng, Li
收藏  |  浏览/下载：6/0  |  提交时间：2019/11/15
Talbot grating for color separation in color liquid crystal display - art. no. 68320P 会议论文
HOLOGRAPHY AND DIFFRACTIVE OPTICS III, Conference on Holography and Diffractive Optics III, Beijing, PEOPLES R CHINA, Web of Science
Zhang, Yan; Tan, Qiaofeng; Yan, Yingbai; Jin, Guofan
收藏  |  浏览/下载：3/0
Talbot grating for color separation in color liquid crystal display 会议论文
Proceedings of the SPIE - The International Society for Optical Engineering, Holography and Diffractive Optics III, Beijing, China, INSPEC
Yan Zhang; Qiaofeng Tan; Yingbai Yan; Guofan Jin
收藏  |  浏览/下载：5/0
Central hole effect on Whispering-Gallery-Mode of triangular lattice photonic crystal microcavity (EI CONFERENCE) 会议论文
Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China
Liu G.; Ning Y.; Li T.; Cui J.; Zhang Y.; Zhang X.; Wang Z.; Wang L.
收藏  |  浏览/下载：15/0  |  提交时间：2013/03/25
High-performance EML grown on taper-masked pattern substrates by ultra-low-pressure MOCVD 会议论文
3rd international conference on materials for advanced technologies/9th international conference on advanced materials, singapore, singapore, jul 03-08, 2005
Zhao, Q; Pan, JQ; Zhang, J; Zhu, HL; Wang, W
收藏  |  浏览/下载：156/44  |  提交时间：2010/03/29
Study on photonic band gaps of polystyrene photonic crystal slabs 会议论文
作者:  Wang Daobin;  Hou Shanglin;  Chen Yuhong;  Zhang Cairong;  Yuan Lihua
收藏  |  浏览/下载：4/0  |  提交时间：2019/11/15
Investigation of growth mode in ZnO thin films prepared at different temperature by plasma-molecular beam epitaxy (EI CONFERENCE) 会议论文
13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004
Liang H. W.; Lu Y. M.; Shen D. Z.; Yan J. F.; Li B. H.; Zhang J. Y.; Liu Y. C.; Fan X. W.
收藏  |  浏览/下载：26/0  |  提交时间：2013/03/25
High-quality ZnO thin films on c-plane sapphire (Al2O 3) substrates were prepared by plasma-molecular beam epitaxy (P-MBE). The influence of growth temperature on growth mode of ZnO was investigated. Real-time monitored by reflection high-energy electron diffraction (RHEED) images show that  below 500 C  ZnO thin film was grown by three-dimension (3D) growth mode. While the two-dimension (2D) growth mode was obtained above growth temperature of 650 C. Atomic force microscopy (AFM) images present that the surface morphology of ZnO thin film with 2D growth is improved and X-ray rocking curves (XRC) indicate that the full width at half maximum (FWHM) of the ZnO (0 0 2) peak becomes narrow. From the photoluminescence (PL) spectra  ultraviolet (UV) emission peak exhibits obvious blue-shift for the samples grown at lower temperature  which is attributed to the effect of the quantum confinement arisen from small crystal grain sizes. The minimum carrier concentration of N=7.661016 cm-3 was obtained in the ZnO thin films with the 2D grown  which is closed to that of bulk ZnO. 2005 Elsevier B.V. All rights reserved.  
Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy 会议论文
10th international conference on defects - recognition, imaging and physics in semiconductors (drip 10), batz sur mer, france, sep 29-oct 02, 2003
作者:  Ye XL;  Xu B
收藏  |  浏览/下载：11/0  |  提交时间：2010/10/29
Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures 会议论文
international conference on materials for advanced technologies, singapore, singapore, dec 07-12, 2003
作者:  Han PD
收藏  |  浏览/下载：83/1  |  提交时间：2010/10/29

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