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| A ZnO-based resistive device for RRAM application 会议论文
2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2019-01-01
作者: Xie, Hongwei; Liu, Yantao; Qi, Yue
  收藏 | 浏览/下载：5/0 | 提交时间：2019/12/20
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| A NiOx, based threshold switching selector for RRAM crossbar array application 会议论文
2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2019-01-01
作者: Xie, Hongwei; Liu, Yantao; Huang, Zhongxiao
收藏 | 浏览/下载：6/0 | 提交时间：2019/12/20
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| A NiOx based threshold switching selector for RRAM crossbar array application 会议论文
2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019, Xi'an, China, 2019-06-12
作者: Xie, Hongwei; Liu, Yantao; Huang, Zhongxiao
收藏 | 浏览/下载：4/0 | 提交时间：2019/12/20 |
| 40×Retention Improvement by Eliminating Resistance Relaxation with High Temperature Forming in 28 nm RRAM Chip 会议论文
作者: Xu XX(许晓欣) ; Tai L(台路); Gong TC(龚天成); Yin JH(殷嘉浩); Peng Huang
收藏 | 浏览/下载：34/0 | 提交时间：2019/05/13 |
| HfO2 self-rectifying selector in RRAM array 会议论文
14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), OCT 31-NOV 03, 2018
作者: Zhang, Xinlei; Ji, Hao; Jiang, Ran
收藏 | 浏览/下载：4/0 | 提交时间：2019/12/31 |
| HfO2 self-rectifying selector in RRAM array 会议论文
14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018, October 31, 2018 - November 3, 2018
作者: Zhang, Xinlei; Ji, Hao; Jiang, Ran
收藏 | 浏览/下载：4/0 | 提交时间：2019/12/31 |
| 8-layers 3D Vertical RRAM with Excellent Scalability towards Storage Class Memory Applications 会议论文
作者: Luo Q(罗庆); Xu XX(许晓欣); Gong TC(龚天成); Lv HB(吕杭炳); Dong DN(董大年)
收藏 | 浏览/下载：24/0 | 提交时间：2018/07/26 |
| BEOL Based RRAM with One Extra-mask for Low Cost, Highly Reliable Embedded Application in 28 nm Node and Beyond 会议论文
作者: Lv HB(吕杭炳); Xu XX(许晓欣); Yuan P(袁鹏); Dong DN(董大年); Gong TC(龚天成)
收藏 | 浏览/下载：26/0 | 提交时间：2018/07/26 |
| 130nm 1mb hfox rram chip using self adaptive peripheral circuit system techniques for wider work temperature range 会议论文
作者: Zhang F(张锋)
收藏 | 浏览/下载：8/0 | 提交时间：2018/07/26 |
| Simulation of doping effect for HfO2-based RRAM based on first-principles calculations 会议论文
作者: Wei W(魏巍); Chuai XC(揣喜臣); Lu ND(卢年端); Wang Y(王艳); Li L(李泠)
收藏 | 浏览/下载：12/0 | 提交时间：2018/07/26 |
