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The Precursor Chemistry and High Performance Hybrid perovskites Solar Cells 会议论文
Liang Li; Zonghao Liu; Huanping Zhou
收藏  |  浏览/下载：8/0  |  提交时间：2017/12/03
Nonpolar a-plane GaN films grown on gamma-LiAlO2 (3 0 2) substrates by low-pressure MOCVD 会议论文
16th International Conference on Crystal Growth (ICCG16)/14th International Conference on Vapor Growth and Epitaxy (ICVGE14), Beijing, PEOPLES R CHINA, AUG 08-13, 2010
作者:  Xu, K (徐科);  Wang, JF (王建峰);  Zhang, M (张敏);  Huang, J (黄俊)
收藏  |  浏览/下载：16/0  |  提交时间：2012/08/23
Facile Controlled Synthesis of Manganese Oxide Hierarchical Microspheres by Hydrothermal Method 会议论文
11th International Conference in Asia of the International-Union-of-Materials-Research-Societies, Qingdao, PEOPLES R CHINA, SEP 25-28, 2010
作者:  Chen, Y. F.;  Chen, Y. F.;  Chen, Y. F.
收藏  |  浏览/下载：20/0  |  提交时间：2014/08/28
退火条件对LDPE空间电荷特性的影响研究 会议论文
中国物理学会静电专业委员会第十二届学术年会论文集, 中国物理学会静电专业委员会第十二届学术年会, 中国青岛, CNKI, 中国物理学会静电专业委员会
周远翔; 刘鸿斌; 王宁华; 高斌; 梁曦东; 关志成; 高田达雄; ZHOU Yuan-xiang; LIU Hong-bin; WANG Ning-hua; GAO Bin; LIANG Xi-dong; GUAN Zhi-cheng; TAKADA Tatso
收藏  |  浏览/下载：4/0
Effects of crystallinity on the space charge properties of polyethylene 会议论文
JOURNAL OF ELECTROSTATICS, 10th International Conference on Electrostatics, Espoo, FINLAND, Web of Science
Wang, NH; Zhou, YX; Liu, HB; Gao, B; Liang, XD; Guan, ZC; Takada, T
收藏  |  浏览/下载：3/0
Setting behavior of fast-setting calcium phosphate cement with mineral phase of bone 会议论文
HIGH-PERFORMANCE CERAMICS III, PTS 1 AND 2, 3rd China International Conference on High-Performance Ceramics (CICC-3), Shenzhen, PEOPLES R CHINA, Web of Science
Jian, P; Jiemo, T; Limin, D; Chen, W
收藏  |  浏览/下载：3/0
Dielectric properties of Ni/Poly(vinylidene fluoride) composites at high frequencies 会议论文
2010 11th International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2010
作者:  Guangsen He;  Tao Zhao;  Rong Sun;  Shuhui Yu;  Ruxu Du
收藏  |  浏览/下载：5/0  |  提交时间：2015/08/21
Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer 会议论文
international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007
Zhao, YM; Sun, GS; Liu, XF; Li, JY; Zhao, WS; Wang, L; Li, JM; Zeng, YP
收藏  |  浏览/下载：55/0  |  提交时间：2010/03/09
Redox Characterization of Pd-perovskites Prepared by a Sol-gel Process 会议论文
pre-conference of icc 14-nanocatalysis: fundamentals & applications, 中国, 2008-7-9
张晓静; 姚颂东; 李娟; 申文杰
收藏  |  浏览/下载：14/0  |  提交时间：2011/07/11
Fabrication of polysilicon thin film on glass with low-temperature UV-assisted crystallization (EI CONFERENCE) 会议论文
ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China
Huang J. Y.; Ling Z. H.; Jing H.; Fu G. Z.; Zhao Y. H.
收藏  |  浏览/下载：20/0  |  提交时间：2013/03/25
The amorphous silicon (a-Si) film was crystallized on glass by a simple method employed ultraviolet at temperatures as low as 400C. The employ of ultraviolet enhanced the crystallization of amorphous silicon. This method is able to uniformly crystallized large-area amorphous silicon films. The polysilicon films crystallized by this way are suitable for the fabrication of thin film transistors on ordinary glass. Crystallization process is performed in a furnace. Amorphous silicon sample is placed on a hot plate and irradiated by a bank of ultraviolet lamps through a diffuser plate to improve the uniformity of light that irradiates the sample. Raman microscopy is used for analyzing the qualities of UV-assisted crystallized silicon films. By measuring the Raman spectra the effects of anneal temperature and process time on the crystallizing behavior  crystallinity and grain size of the processed films were obtained. There has a threshold temperature for crystallization of amorphous silicon film in the presence of ultraviolet irradiation with certain intensity  i.e. by ultraviolet irradiation with certain intensity only when the temperature is up to the threshold temperature  the crystallization can be triggered. The threshold temperature is 400C when the intensity of ultraviolet irradiation is 1mW/cm2. Above threshold temperature  the increase of anneal temperature increased the rate of crystallization. Crystallinity and grain size extracted from Raman spectra of samples increase with the extending of process time at certain temperature. Crystallization of amorphous silicon film with thickness of 50nm completed within 6 hours at 400C irradiated by ultraviolet with intensity of 2mW/cm2.  

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