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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Hydro-mechanical mechanism and thresholds of rainfall-induced unsaturated landslides 会议论文 Vienna, Austria., 2017.4.20 作者:  Zongji Yang;  Xiaoqin Lei;  Dong Huang;  Jianping Qiao 收藏  |  浏览/下载：23/0  |  提交时间：2017/07/21 Hydro-mechanical Mechanism  Thresholds  Rainfall-induced  Unsaturated Landslides   Quantifying solute transport using tracer infiltration in clay soil 会议论文 作者:  Huaiwei, Sun;  Lei, Zhu;  Kang, Wang;  Jinzhong, Yang 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/05 solute transport  dye tracers  non-uniformity  mechanisms   Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well 会议论文 asia-pacific optical and wireless communications conference (apoc 2003), wuhan, peoples r china, nov 04-06, 2003 Ying-Qiang X; Zhang W; Niu ZC; Wu RG; Wang QM 收藏  |  浏览/下载：16/1  |  提交时间：2010/10/29 GaNAs  SiO2 encapsulation  rapid-thermal-annealing  nitrogen reorganization  MOLECULAR-BEAM EPITAXY  OPTICAL-PROPERTIES  MU-M   Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Gao F; Lin YX; Huang DD; Li JP; Sun DZ; Kong MY; Zeng YP; Li JM; Lin LY 收藏  |  浏览/下载：8/0  |  提交时间：2010/11/15 annealing  molecular beam epitaxy  germanium silicon alloys  semiconducting materials  STRAIN RELAXATION   Structural and optical changes in GaAs/InAs/GaAs structure induced by thermal annealing 会议论文 5th international conference on solid-state and integrated circuit technology, beijing, peoples r china, oct 21-23, 1998 Mo QW; Fan TW; Gong Q; Wu J; Wang ZG; Bai YQ; Zhang W 收藏  |  浏览/下载：25/0  |  提交时间：2010/10/29 MOLECULAR-BEAM EPITAXY  COHERENT ISLANDS  GAAS  GROWTH  DOTS  DISLOCATIONS  TEMPERATURE  MECHANISMS  SI(001)  INGAAS   New method for the growth of highly uniform quantum dots 会议论文 2nd international conference on low dimensional structures and devices, lisbon, portugal, may 19-21, 1997 Pan D; Zeng YP; Kong MY 收藏  |  浏览/下载：9/0  |  提交时间：2010/11/15 self-formed quantum dot  Stranski-Krastanow growth mode  superlattice  MOLECULAR-BEAM EPITAXY  INGAAS  GAAS  DISLOCATIONS  MULTILAYERS  DEFECTS  STRAIN