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西安交通大学 [4]
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The total ionizing dose effect on SiO2 and new high-k gate dielectrics under gamma-ray irradiation
会议论文
作者:
Ding, Man
;
Cheng, Yonghong
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2019/11/19
Equivalent oxide thickness
Gamma irradiation
Gamma-ray irradiation
Interface trapped charges
Silicon dangling bond
Thermally oxidized
Total ionizing dose effects
Trapping efficiencies
Suppression of current collapse in AlGaN/GaN MISHEMTs using in-situ SiN gate dielectric and PECVD SiN passivation
会议论文
作者:
Jiang, Huaxing
;
Liu, Chao
;
Lu, Xing
;
Lau, Kei May
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2019/11/26
AlGaN/GaN MIS-HEMTs
Current collapse
GaN based
ON/OFF current ratio
Power switching applications
SiN gate dielectrics
Subthreshold slope
Surface passivation
Characterization of LaxHfyO gate dielectrics in 4H-SiC MOS capacitor
会议论文
作者:
Xia, Jing Hua
;
Martin, David M.
;
Suvanam, Sethu Saveda
;
Zetterling, Carl Mikael
;
O¨stling, Mikael
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  |  
浏览/下载:8/0
  |  
提交时间:2019/12/03
4H-SiC
High quality
High- k
High- k gate dielectrics
Nano-laminated films
Post deposition annealing
SiC MOS capacitor
HfO2-TiO2 Ultra-Thin Gate Dielectric by RF Sputtering
会议论文
作者:
Li, G. X.
;
Chen, X. F.
;
Ren, W.
;
Shi, P.
;
Wu, X. Q.
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  |  
浏览/下载:2/0
  |  
提交时间:2019/12/10
HfTiO4 thin films
sputtering
High-K gate dielectrics
Preparation and properties of Ni-Si-O thin film prepared by sol-gel method
会议论文
High-Performance Ceramics IV, Pts 1-3, 4th China International Conference on High-Performance Ceramics (CICC-4), Chengdu, PEOPLES R CHINA, Web of Science
Zhao, Rongjuan
;
Lin, Yuanhua
;
Cai, Jingnan
;
Nan, Ce-Wen
;
Xie, Dan
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  |  
浏览/下载:5/0
  |  
提交时间:2017/06/15
Ni-Si-O
thin fim
sol-gel
leakage current
HIGH-DIELECTRIC-CONSTANT
ATOMIC-LAYER DEPOSITION
K GATE DIELECTRICS
TA2O5
TIO2
Materials Science, Ceramics
Materials Science, Composites
Off-State Leakage Current in Nano-Scale MOSFET with Hf-Based Gate Dielectrics
会议论文
2nd IEEE International Nanoelectronics Conference, Shanghai, PEOPLES R CHINA, MAR 24-27, 2008
作者:
Yang, JH
;
Li, GF
;
Liu, HL
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  |  
浏览/下载:1/0
  |  
提交时间:2015/07/31
Effects of different annealing gases on pentacene OTFT with HfLaO gate dielectric (EI收录)
会议论文
IEEE Electron Device Letters
作者:
Deng, L.F.[1]
;
Lai, P.T.[1]
;
Chen, W.B.[2]
;
Xu, J.P.[3]
;
Liu, Y.R.[4]
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/04/15
Annealing
Carrier mobility
Chemical sensors
Gate dielectrics
Gates (transistor)
Passivation
Semiconducting organic compounds
Effects of channel composition and gate dielectrics on the stability of a-IGZO TFTs (CPCI-S收录)
会议论文
PROCEEDINGS OF CHINA DISPLAY/ASIA DISPLAY 2011
作者:
Yao, J. K.[1]
;
Zhang, S. D.[1,2]
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  |  
浏览/下载:2/0
  |  
提交时间:2019/04/15
a-IGZO TFTs
V-O(2+)
gate dielectrics
electrical stability
optical stability
Improved performance of low-voltage pentacene OTFTs by incorporating la to hafinium oxide gate dielectric (EI收录)
会议论文
2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010, Hong Kong, China, December 15, 2010 - December 17, 2010
作者:
Deng, L.F.[1]
;
Lai, P.T.[1]
;
Tao, Q.B.[1]
;
Choi, H.W.[1]
;
Xu, J.P.[2]
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/04/16
Dielectric materials
Gate dielectrics
Gates (transistor)
Hafnium compounds
Semiconducting organic compounds
Solid state devices
Threshold voltage
Low-voltage polymer thin-film transistors with high-k HfTiO gate dielectric annealed in NH3 or N2 (EI收录)
会议论文
2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009, Xi'an, China, December 25, 2009 - December 27, 2009
作者:
Deng, L.F.[1]
;
Choi, H.W.[1]
;
Lai, P.T.[1]
;
Liu, Y.R.[2]
;
Xu, J.P.[3]
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/04/17
Annealing
Carrier mobility
Coatings
Dielectric devices
Dielectric films
Gate dielectrics
Gates (transistor)
Hafnium
Polymeric films
Semiconducting organic compounds
Solid state devices
Spin dynamics
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