QQ客服 官方微博 反馈留言

浏览/检索结果: 共7条，第1-7条 帮助 限定条件 内容类型：会议论文    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Deep levels in high resistivity GaN epilayers grown by MOCVD 会议论文 32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005 Fang, CB; Wang, XL; Wang, JX; Liu, C; Wang, CM; Hu, GX; Li, JP; Li, CJ 收藏  |  浏览/下载：114/18  |  提交时间：2010/03/29 THERMALLY STIMULATED CURRENT  GALLIUM NITRIDE  DEFECTS   Growth and characterization of semi-insulating GaN films grown by MOCVD 会议论文 3rd asian conference on crystal growth and crystal technology (cgct-3), beijing, peoples r china, oct 16-19, 2005 Fang, CB; Wang, XL; Hu, GX; Wang, JX; Wang, CM; Li, JM 收藏  |  浏览/下载：202/36  |  提交时间：2010/03/29 MOCVD   Recent research results on deep level defects in semi-insulating InP - Application to improve material quality 会议论文 12th international conference on indium phosphide and related materials, princeton, nj, may 07-11, 2006 Zhao, YW (Zhao, Youwen); Dong, ZY (Dong, Zhiyuan); Dong, HW (Dong, Hongwei); Sun, NF (Sun, Niefeng); Sun, TN (Sun, Tongnian) 收藏  |  浏览/下载：61/12  |  提交时间：2010/03/29 STIMULATED CURRENT SPECTROSCOPY  CURRENT TRANSIENT SPECTROSCOPY  FE-DOPED INP  POINT-DEFECTS  COMPENSATION  TEMPERATURE  DONORS  TRAPS   Annealing ambient controlled deep defect formation in InP 会议论文 10th international conference on defects - recognition, imaging and physics in semiconductors (drip 10), batz sur mer, france, sep 29-oct 02, 2003 Zhao YW; Dong ZY; Duan ML; Sun WR; Zeng YP; Sun NF; Sun TN 收藏  |  浏览/下载：20/1  |  提交时间：2010/10/29 FE-DOPED INP  SEMIINSULATING INP  POINT-DEFECTS  PRESSURE  WAFERS  TRAPS   Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers 会议论文 9th international conference on defects: recognition, imaging and physics in semiconductors (drip ix), rimini, italy, sep 24-28, 2001 Zhao YW; Sun NF; Dong HW; Jiao JH; Zhao JQ; Sun TN; Lin LY 收藏  |  浏览/下载：14/0  |  提交时间：2010/11/15 indium phosphide  semi-insulating  annealing  PICTS  photoluminescence  SEMIINSULATING INP  INDIUM-PHOSPHIDE  FE  PHOTOLUMINESCENCE  TEMPERATURE   Observation of deep electron states in n-type Al-doped ZnS1-xTex grown by molecular beam epitaxy 会议论文 6th international conference on solid-state and integrated-circuit technology, shanghai, peoples r china, oct 22-25, 2001 Lu LW; Ge WK; Sou IK; Wang J 收藏  |  浏览/下载：15/0  |  提交时间：2010/10/29 ZNSTE   Improved neutron radiation hardness for Si detectors: Application of low resistivity starting material and or manipulation of N-eff by selective filling of radiation-induced traps at low temperatures 会议论文 1998 nuclear science symposium (nss), toronto, canada, nov 08-14, 1998 Dezillie B; Li Z; Eremin V; Bruzzi M; Pirollo S; Pandey SU; Li CJ 收藏  |  浏览/下载：17/0  |  提交时间：2010/11/15 SILICON DETECTORS