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科研机构
半导体研究所 [62]
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会议论文 [62]
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2011 [1]
2009 [2]
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半导体材料 [43]
光电子学 [12]
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内容类型:会议论文
专题:半导体研究所
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Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation
会议论文
16th international conference on crystal growth (iccg16)/14th international conference on vapor growth and epitaxy (icvge14), beijing, peoples r china, aug 08-13, 2010
阎Zhou HY (Zhou Huiying)
;
Qu SC (Qu Shengchun)
;
Jin P (Jin Peng)
;
Xu B (Xu Bo)
;
Ye XL (Ye Xiaoling)
;
Liu JP (Liu Junpeng)
;
Wang ZG (Wang Zhanguo)
收藏
  |  
浏览/下载:47/0
  |  
提交时间:2011/07/26
In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD
会议论文
international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007
Sun, GS
;
Zhao, YM
;
Wang, L
;
Wang, L
;
Zhao, WS
;
Liu, XF
;
Ji, G
;
Zeng, YP
收藏
  |  
浏览/下载:39/0
  |  
提交时间:2010/03/09
in-situ doping
boron
aluminum
memory effects
hot-wall LPCVD
4H-SiC
Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer
会议论文
international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007
Zhao, YM
;
Sun, GS
;
Liu, XF
;
Li, JY
;
Zhao, WS
;
Wang, L
;
Li, JM
;
Zeng, YP
收藏
  |  
浏览/下载:54/0
  |  
提交时间:2010/03/09
Silicon Carbide
Aluminum Nitride
buffer layer
LPCVD
Fracture properties of silicon carbide thin films charcterized by bulge test of long membranes
会议论文
3rd ieee international conference of nano/micro engineered and molecular systems, sanya, peoples r china, jan 06-09, 2008
Zhou, W
;
Yang, JL
;
Sun, GS
;
Liu, XF
;
Yang, FH
;
Li, JM
收藏
  |  
浏览/下载:49/0
  |  
提交时间:2010/03/09
bulge test fracture property
silicon carbide thin films
Weibull distribution function
Growth of GaSb and GaInAsSb layers for thermophotovolatic cells by liquid phase epitaxy - art. no. 68411E
会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
作者:
Yin ZG
;
Zhang XW
收藏
  |  
浏览/下载:46/0
  |  
提交时间:2010/03/09
thermophotovoltaic cell
High-efficiency GaN-based blue LEDs grown on nano-patterned sapphire substrates for solid-state lighting - art. no. 684103
会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Yan, FW
;
Gao, HY
;
Zhang, Y
;
Li, JM
;
Zeng, YP
;
Wang, GH
;
Yang, FH
收藏
  |  
浏览/下载:134/0
  |  
提交时间:2010/03/09
GaN
MOCVD
LED
nano-pattern
SEM
HRXRD
PL
The effects of sapphire substrates processes to the LED efficiency - art. no. 68410M
会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Yang, H
;
Chen, Y
;
Wang, LB
;
Yi, XY
;
Fan, JM
;
Liu, ZQ
;
Yang, FH
;
Wang, LC
;
Wang, GH
;
Zeng, YP
;
Li, JM
收藏
  |  
浏览/下载:47/0
  |  
提交时间:2010/03/09
GaN-based LED
grinding
ray tracing
Fracture properties of PECVD silicon nitride thin films by long rectangular memrane bulge test
会议论文
3rd ieee international conference of nano/micro engineered and molecular systems, sanya, peoples r china, jan 06-09, 2008
Zhou, W
;
Yang, JL
;
Li, Y
;
Yang, FH
收藏
  |  
浏览/下载:41/0
  |  
提交时间:2010/03/09
bulge test
fracture property
silicon nitride
Weibull distribution function
High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T
会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Zhang, Y
;
Yan, FW
;
Gao, HY
;
Li, JM
;
Zeng, YP
;
Wang, GH
;
Yang, FH
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2010/03/09
GaN
nitrides
LED
MOCVD
patterned sapphire substrate
wet etching
Improvement of GaN-based light emitting diodes performance grown on sapphire substrates patterned by wet etching - art. no. 684107
会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Gao, HY
;
Yan, FW
;
Zhang, Y
;
Li, JM
;
Zeng, YP
;
Wang, GH
;
Yang, FH
收藏
  |  
浏览/下载:45/0
  |  
提交时间:2010/03/09
pyramidal patterned substrate
InGaN/GaN
light-emitting diode
wet etching
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