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科研机构
大连理工大学 [13]
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专利 [13]
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2016 [1]
2015 [2]
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共13条,第1-10条
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内容类型:专利
专题:大连理工大学
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Preparation of high-coercivity ferroplatinum alloy involves taking iron, cobalt, platinum, palladium, boron, silicon and ferrophosphorus alloy, smelting, single roll melt spinning, dealloying, vacuum drying and vacuum isothermal annealing.
专利
申请日期: 2016-01-01, 公开日期: 2016-02-03
作者:
LI Y WANG Y ZHANG W MA D
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浏览/下载:3/0
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提交时间:2019/12/09
Preparation of full metallic compound interconnecting welding point involves taking first substrate, plating, sputtering, annealing, sputtering, vapor depositing, evaporating, adding second substrate, plating, sputtering and welding.
专利
申请日期: 2015-01-01, 公开日期: 2015-06-10
作者:
HUANG M YANG F ZHANG Z ZHAO N HUANG F
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浏览/下载:2/0
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提交时间:2019/12/09
Preparation of steel and titanium nitrocarburizing and cathodic arc ion plating film includes cold rolling or cold drawn shaping, annealing, alternating composite thick film layer and performing cathodic arc ion plating coating.
专利
申请日期: 2015-01-01, 公开日期: 2015-08-26
作者:
CHEN B CHEN D DONG C GU W HU X ZHAN
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浏览/下载:10/0
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提交时间:2019/12/09
Gallium nitride oxide epitaxial film preparation method, involves cleaning substrate after completion of substrate selecting process, and performing in-situ annealing processing in room temperature to obtain film.
专利
申请日期: 2014-01-01, 公开日期: 2014
作者:
LIANG H LIU Y DU G CHEN Y SHEN R XI
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浏览/下载:2/0
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提交时间:2019/12/11
Method for preparing beta-silicon carbide thin film for high-voltage power device, involves providing silicon source, hydrogen silicon source, and substrate for performing chemical vapor deposition and annealing processes.
专利
申请日期: 2013-01-01, 公开日期: 2013-10-09
作者:
BIAN J LIU Y LIU W QIN F ZHANG Z BI
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浏览/下载:8/0
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提交时间:2019/12/13
Preparation of doped zinc oxide film used to prepare solar battery, flat display, or a heating film, comprises preparing target, processing substrate, evaporating, and annealing.
专利
申请日期: 2012-01-01, 公开日期: 2012-07-18
作者:
CAO S HOU B YE F ZHANG W
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浏览/下载:3/0
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提交时间:2019/12/18
Preparation method of copper film involves adding carbon to copper film to form self-blunting non-crystal layer to which effectively prevent scattering process of copper-silicon then annealing in vacuum state.
专利
申请日期: 2010-01-01, 公开日期: 2010-06-23
作者:
DONG C LI X NIE L
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浏览/下载:3/0
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提交时间:2019/12/24
Silicon photoelectric diode manufacturing method, involves carrying low temperature annealing to wafer to form ohmic contact between silicon material of device layer and positive and negative electrodes of upper surface.
专利
申请日期: 2010-01-01, 公开日期: 2010-05-26
作者:
CHU J HAN Z MENG F WANG Z
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浏览/下载:1/0
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提交时间:2019/12/24
Preparation of foam glass porcelain tile involves mixing, molding, press-forming, heating, heat-preserving and annealing foam glass material of glass powder, vesicant, co-solvent and foam stabilizer, and porcelain tile material.
专利
申请日期: 2008-01-01, 公开日期: 2008-02-20
作者:
NING G YAN F SUN B LIN Y
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浏览/下载:8/0
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提交时间:2019/12/27
Preparation method of multi-cellular glass used for e.g. warm holding heat insulation of industry equipment involves annealing mixture in temperature reducing annealing stage at predetermined temperature and temperature reducing speed.
专利
申请日期: 2007-01-01, 公开日期: 2007-10-24
作者:
NING G YAN F SUN B LIN Y
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浏览/下载:3/0
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提交时间:2019/12/27
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