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CORC

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Novel strategy to improve the tribological property of polymer: In-situ growing amorphous carbon coating on the surface 期刊论文
APPLIED SURFACE SCIENCE, 2020, 卷号: 505
作者:  Guan, Wen;  Wang, Yongxin;  Fischer, Christian B.;  Wehner, Stefan;  Wang, Zongbao
收藏  |  浏览/下载：54/0  |  提交时间：2020/12/16
Layer-by-layer epitaxial growth of monoclinic SrIrO3 thin films on (111)-oriented SrTiO3 through interface engineering 期刊论文
THIN SOLID FILMS, 2020, 卷号: 709
作者:  Zheng, Xuan;  Kong, Shuai;  Zhu, Jin;  Feng, Jiatai;  Lu, Zengxing
收藏  |  浏览/下载：7/0  |  提交时间：2020/12/16
Tunable superconductivity of epitaxial TiN films through oxygen doping 期刊论文
AIP ADVANCES, 2020, 卷号: 10, 期号: 5
作者:  Peng, Shaoqin;  Zhang, Ruyi;  Song, Yang;  Pei, Yujuan;  Bi, Jiachang
收藏  |  浏览/下载：51/0  |  提交时间：2020/12/16
Lattice-Mismatch-Induced Oscillatory Feature Size and Its Impact on the Physical Limitation of Grain Size 期刊论文
PHYSICAL REVIEW APPLIED, 2018, 卷号: 9, 期号: 3
作者:  Deng, Jinyu;  Li, Huihui;  Dong, Kaifeng;  Li, Run-Wei;  Peng, Yingguo
收藏  |  浏览/下载：27/0  |  提交时间：2018/12/04
Structural transition behavior of ZnS nanotetrapods under high pressure 期刊论文
HIGH PRESSURE RESEARCH, 2015, 卷号: 35, 期号: 1, 页码: 9-15
作者:  Zhao, HF;  Liu, W;  Zhu, J;  Shen, X;  Xiong, L
收藏  |  浏览/下载：24/0  |  提交时间：2016/04/18
Epitaxial growth of Ge1-xSnx films with x up to 0.14 grown on Ge (00l) at low temperature 期刊论文
CHINESE PHYSICS B, 2014, 卷号: 23, 期号: 8, 页码: 88112
作者:  Tao, P;  Huang, L;  Cheng, HH;  Wang, HH;  Wu, XS;王焕华
收藏  |  浏览/下载：25/0  |  提交时间：2016/04/08
Growth and phase transition characteristics of pure M-phase VO2 epitaxial film prepared by oxide molecular beam epitaxy 期刊论文
APPLIED PHYSICS LETTERS, 2013, 卷号: 103, 期号: 13, 页码: 131914
作者:  Fan, LL;  Chen, S;  Wu, YF;  Chen, FH;  Chu, WS
收藏  |  浏览/下载：10/0  |  提交时间：2016/04/08
Synchrotron radiation study of VO2 crystal film epitaxial growth on sapphire substrate with intrinsic multi-domains 期刊论文
APPLIED PHYSICS LETTERS, 2013, 卷号: 102, 期号: 1, 页码: 11604
作者:  Fan, LL;  Wu, YF;  Si C(姒程);  Si, C;  Pan, GQ
收藏  |  浏览/下载：11/0  |  提交时间：2016/04/08
Epitaxial growth of Ni(Al)Si0.7Ge0.3 on Si0.7Ge0.3/Si(100) by Al interlayer mediated epitaxy 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 25, 页码: 252101
Zhang,B; Yu,W; Zhao,QT; Mussler,G; Jin,L; Buca,D; Hollander,B; Hartmann,JM; Zhang,M; Wang,X; Mantl,S
收藏  |  浏览/下载：7/0  |  提交时间：2012/04/10
Epitaxial growth of Ni(Al)Si0.7Ge0.3 on Si0.7Ge0.3/Si(100) by Al interlayer mediated epitaxy 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 25, 页码: 252101
Zhang, B; Yu, W; Zhao, QT; Mussler, G; Jin, L; Buca, D; Hollander, B; Hartmann, JM; Zhang, M（重点实验室）; Wang, X（重点实验室）; Mantl, S
收藏  |  浏览/下载：15/0  |  提交时间：2013/05/10

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