Epitaxial growth of Ni(Al)Si0.7Ge0.3 on Si0.7Ge0.3/Si(100) by Al interlayer mediated epitaxy

	Epitaxial growth of Ni(Al)Si0.7Ge0.3 on Si0.7Ge0.3/Si(100) by Al interlayer mediated epitaxy
	Zhang, B ; Yu, W ; Zhao, QT ; Mussler, G ; Jin, L ; Buca, D ; Hollander, B ; Hartmann, JM ; Zhang, M（重点实验室） ; Wang, X（重点实验室） ; Mantl, S
刊名	APPLIED PHYSICS LETTERS
	2011
卷号	98 期号:25 页码:252101
关键词	Physics Applied
ISSN号	0003-6951
学科主题	Physics
收录类别	SCI
原文出处	10.1063/1.3601464
语种	英语
公开日期	2013-05-10
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/115128]
专题	上海微系统与信息技术研究所_信息功能材料国家重点实验室2008-2012_期刊论文
推荐引用方式 GB/T 7714	Zhang, B,Yu, W,Zhao, QT,et al. Epitaxial growth of Ni(Al)Si0.7Ge0.3 on Si0.7Ge0.3/Si(100) by Al interlayer mediated epitaxy[J]. APPLIED PHYSICS LETTERS,2011,98(25):252101.
APA	Zhang, B.,Yu, W.,Zhao, QT.,Mussler, G.,Jin, L.,...&Mantl, S.(2011).Epitaxial growth of Ni(Al)Si0.7Ge0.3 on Si0.7Ge0.3/Si(100) by Al interlayer mediated epitaxy.APPLIED PHYSICS LETTERS,98(25),252101.
MLA	Zhang, B,et al."Epitaxial growth of Ni(Al)Si0.7Ge0.3 on Si0.7Ge0.3/Si(100) by Al interlayer mediated epitaxy".APPLIED PHYSICS LETTERS 98.25(2011):252101.