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Photoconductive study and carrier dynamics of vertically aligned GaAs nanowires 期刊论文
Chinese Materials Research Society, 2013, 卷号: 0, 期号: 1
HuiXia; BimuYao; ZhenyuLu; PingpingChen; TianxinLi
收藏  |  浏览/下载:8/0  |  提交时间:2014/11/10
Impact of growth parameters on the morphology and microstructure of epitaxial GaAs nanowires grown by molecular beam epitaxy 期刊论文
J.Alloy.Compd, 2013, 卷号: 580, 期号: 82
Z.Y.Lu P.P.Chen Z.M.Liao S.X.Shi Y.Sun T.X.Li Y.H.Zhang J.Zou W.Lu
收藏  |  浏览/下载:24/0  |  提交时间:2014/11/10
Surface Oxidation Properties in a Topological Insulator Bi2Te3 Film 期刊论文
CHIN.PHYS.LETT., 2013, 卷号: 30, 期号: 10
作者:  GUOJian-Hua QIUFeng ZHANGYun DENGHui-Yong HUGu-Jin LIXiao-Nan YUGuo-Lin DAINing
收藏  |  浏览/下载:8/0  |  提交时间:2014/11/10
GaSb量子点液相外延生长研究 期刊论文
红外毫米波学报, 2013, 卷号: 32, 期号: 3
胡淑红; 邱锋; 吕英飞; 孙常鸿; 王奇伟; 郭建华; 邓惠勇; 戴宁; ZHUANGQian-Dong; YINMin; KRIERAnthony
收藏  |  浏览/下载:15/0  |  提交时间:2014/11/10
Anomalous depahasing of two-dimensional electrons in an AlGaAs/GaAs parabolic quantum well structure 期刊论文
Solid State Commu, 2011, 卷号: 151, 期号: 21
作者:  K.H.Gao;  G.Yu;  A.J.SpringThorpe
收藏  |  浏览/下载:6/0  |  提交时间:2012/10/23
Temperature-Dependent Optical Properties of InAs/GaAs Self-Assembled Quantum Dots:Spectroscopic Measurements and an Eight-Band Study 期刊论文
CHIN.PHYS.LETT., 2011, 卷号: 28, 期号: 11
作者:  X.H.Zhou;  P.P.Chen;  X.S.Chen
收藏  |  浏览/下载:8/0  |  提交时间:2012/10/23
Systematic study on the spacer-dependent magnetic properties of Mn delta-doped GaAs/(Ga, Mn) As ferromagnetic heterostructures: from first principles 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 卷号: 42, 页码: 25002
作者:  Wang XF(王晓芳)
收藏  |  浏览/下载:8/0  |  提交时间:2011/07/14
Transport properties of AlGaAs/GaAs parabolic quantum wells 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 105, 页码: 13712
作者:  Gao KH(高矿红)
收藏  |  浏览/下载:6/0  |  提交时间:2011/07/14
High quality of InAsSb epilayer with cutoff wavelength longer than 10 mu m grown on GaAs by the modified LPE technique 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2009, 卷号: 311, 页码: 2309-2312
作者:  Hu SH(胡淑红)
收藏  |  浏览/下载:8/0  |  提交时间:2011/07/14
Evolution of valence-band alignment with nitrogen content in GaNAs/GaAs single quantum wells 期刊论文
APPLIED PHYSICS LETTERS, 2008, 卷号: 93, 页码: 31904
作者:  Shao J(邵军)
收藏  |  浏览/下载:5/0  |  提交时间:2011/07/08


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